参数资料
型号: AP5521GM-HF
厂商: ADVANCED POWER ELECTRONICS CORP
元件分类: JFETs
英文描述: 2.5 A, 100 V, 0.15 ohm, 2 CHANNEL, N AND P-CHANNEL, Si, POWER, MOSFET
封装: HALOGEN FREE AND ROHS COMPLIANT, SOP-8
文件页数: 1/7页
文件大小: 119K
代理商: AP5521GM-HF
Advanced Power
N AND P-CHANNEL ENHANCEMENT
Electronics Corp.
MODE POWER MOSFET
▼ Simple Drive Requirement
N-CH BVDSS
100V
▼ Low Gate Charge
RDS(ON)
150mΩ
▼ Fast Switching Performance
ID
2.5A
▼ RoHS Compliant & Halogen-Free
P-CH BVDSS
-100V
RDS(ON)
160mΩ
Description
ID
-2.5A
Absolute Maximum Ratings
Symbol
Parameter
Rating
Units
N-channel
P-channel
VDS
Drain-Source Voltage
100
-100
V
VGS
Gate-Source Voltage
+20
V
ID@TA=25℃
Continuous Drain Current
3
2.5
-2.5
A
ID@TA=70℃
Continuous Drain Current
3
2.0
-2.0
A
IDM
Pulsed Drain Current
1
10
-10
A
PD@TA=25℃
Total Power Dissipation
W
TSTG
Storage Temperature Range
-55 to 150
TJ
Operating Junction Temperature Range
-55 to 150
Symbol
Value
Unit
Rthj-a
Maximum Thermal Resistance, Junction-ambient
3
62.5
/W
Data and specifications subject to change without notice
201009241
Parameter
1
Thermal Data
AP5521GM-HF
Halogen-Free Product
2
G2
D2
S2
G1
D1
S1
S1
G1
S2
G2
D1
D2
SO-8
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-
effectiveness.
The SO-8 package is widely preferred for commercial-industrial
surface mount applications and suited for low voltage applications
such as DC/DC converters.
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