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参数资料
| 型号： | AP55T10GS-HF |
| 厂商： | ADVANCED POWER ELECTRONICS CORP |
| 元件分类： | JFETs |
| 英文描述： | 54 A, 100 V, 0.018 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB |
| 封装： | HALOGEN FREE AND ROHS COMPLIANT, TO-263, 3 PIN |
| 文件页数： | 1/4页 |
| 文件大小： | 93K |
| 代理商： | AP55T10GS-HF |
Advanced Power
N-CHANNEL ENHANCEMENT MODE
Electronics Corp.
POWER MOSFET
▼ Simple Drive Requirement
BVDSS
100V
▼ Lower Gate Charge
RDS(ON)
18mΩ
▼ Fast Switching Characteristic
ID
54A
▼ RoHS Compliant & Halogen-Free
Description
Absolute Maximum Ratings
Symbol
Units
VDS
V
VGS
V
ID@TC=25℃
A
ID@TC=100℃
A
IDM
A
PD@TC=25℃
W
PD@TA=25℃
W
TSTG
℃
TJ
℃
Symbol
Value
Units
Rthj-c
Maximum Thermal Resistance, Junction-case
1.2
℃
/W
Rthj-a
40
℃
/W
Data and specifications subject to change without notice
AP55T10GS-HF
Halogen-Free Product
Maximum Thermal Resistance, Junction-ambient (PCB mount)
3
Parameter
Rating
Drain-Source Voltage
100
Gate-Source Voltage
+20
Continuous Drain Current, VGS @ 10V
54
Storage Temperature Range
Continuous Drain Current, VGS @ 10V
38
Pulsed Drain Current
1
160
Total Power Dissipation
125
-55 to 175
Total Power Dissipation
3
3.75
Operating Junction Temperature Range
-55 to 175
201103111
Thermal Data
Parameter
1
G
D
S
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
The TO-263 package is widely preferred for commercial-industrial
surface mount applications and suited for switching power
applications.
G
D
S
TO-263(S)
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