参数资料
| 型号： | AP6015-M10G-13 |
| 厂商： | Diodes Inc |
| 文件页数： | 5/18页 |
| 文件大小： | 0K |
| 描述： | IC REG BUCK SYNC ADJ 0.8A 10MSOP |
| 标准包装： | 1 |
| 类型： | 降压（降压） |
| 输出类型： | 可调式 |
| 输出数： | 1 |
| 输出电压： | 0.8 V ~ 5.5 V |
| 输入电压： | 2.5 V ~ 5.5 V |
| PWM 型： | 电流模式 |
| 频率 - 开关： | 1MHz |
| 电流 - 输出： | 800mA |
| 同步整流器： | 是 |
| 工作温度： | -40°C ~ 85°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 10-TFSOP，10-MSOP（0.118"，3.00mm 宽） |
| 包装： | 标准包装 |
| 供应商设备封装： | 10-MSOP |
| 产品目录页面： | 1137 (CN2011-ZH PDF) |
| 其它名称： | AP6015-M10GDIDKR |
AP6015
High Efficiency Step-Down Low Power DC-DC Converter
Electrical Characteristics
(Continued)
Over recommended operating free-air temperature range, V I =3.6V, V O =2.5V, I O =300 mA, EN=V IN . (unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ.
Max
Unit
Power switch and current limit
P-channel MOSFET on-resistance
V I =V GS =3.6V; I=200mA
V I =V GS =2V; I=200mA
200
-
280
480
410
-
m ?
R DS(on)
I (LIM)
P-channel leakage current V DS =5.5V
V I =V GS =3.6V; I O =200mA
N-channel MOSFET on-resistance
V I =V GS =2V; I O =200mA
N-channel leakage current V DS =5.5V
P-channel current limit 2.5V ≤ V I ≤ 5.5V
-
200
-
-
1200
-
280
500
-
-
1
410
-
1
1600
μ A
m ?
μ A
mA
Power good output (see Note 5)
V (PG)
Power good threshold
Feedback voltage falling
88%
V O
92%
V O
94%
V O
V
Power good hysteresis
2.5% V O
V OL
I LKG
PG output low voltage
PG output leakage current
Minimum supply voltage for valid
power good signal
V (FB) =0.8×V O nominal;
I (sink) =10 μ A
V (FB) =V O nominal
-
1.2
-
0.01
-
0.3
1
-
V
μ A
V
Oscillator
F S
Oscillator frequency
800
1000
1200
KHz
Output
V O
Adjustable output voltage range
0.8
5.5
V
V REF
Reference voltage
AP6015-Adj
AP6015-1.8V
V I =2.5V to 5.5V;
0mA ≤ I O ≤ 800mA
10mA ≤ I O ≤ 800mA
0.784
－ 3%
－ 3%
0.8
-
-
0.816
4%
3%
V
V O
Fixed output
voltage
(see Note 6)
AP6015-2.5V
V I =2.7V to 5.5V;
0mA ≤ I O ≤ 800mA
10mA ≤ I O ≤ 800mA
－ 3%
－ 3%
-
-
4%
3%
V
Line regulation
Load regulation
AP6015-3.3V
V I =3.6V to 5.5V;
0mA ≤ I O ≤ 800mA
10mA ≤ I O ≤ 800mA
V I = V O ＋ 0.5V (min.2V)
to 6.0V; I O =10mA
V I =5.0V;
I O =10mA to 800mA
－ 3%
－ 3%
-
-
0.3
0.8
4%
3%
%/V
%
η
Efficiency
V I =5V; V O =3.3V; I O =300mA
V I =3.6V; V O =2.5V; I O =200mA
94
%
Start-up time
I O =0mA, time from
active EN to V O
0.4
1
4
ms
θ JA
θ JC
Thermal Resistance
Junction-to-Ambient
Thermal Resistance
Junction-to-Case
MSOP-10L (Note 7)
MSOP-10L (Note 7)
161
39
o
o
C/W
C/W
Notes:
5. Power good is not valid for the first 100 μ s after EN goes high. Please refer to the application section for more information.
6. The output voltage accuracy includes line and load regulation over the full temperature range.
7. Test condition for MSOP-10L: Device mounted on 2oz copper, minimum recommended pad layout on top & bottom layer with thermal vias,
double sided FR-4 PCB
AP6015 Rev. 3
5 of 18
www.diodes.com
FEBRUARY 2009
? Diodes Incorporated
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