参数资料
型号: AP60N03GJ
厂商: ADVANCED POWER ELECTRONICS CORP
元件分类: JFETs
英文描述: 55 A, 30 V, 0.0135 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251
封装: ROHS COMPLIANT PACKAGE-3
文件页数: 4/4页
文件大小: 61K
代理商: AP60N03GJ
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
Fig 11. Switching Time Waveform
Fig 12. Gate Charge Waveform
4/4
AP60N03GH/J
1
10
100
1000
1
10
100
V DS , Drain-to-Source Voltage (V)
I
D
(A
)
T c =25
o C
Single Pulse
10us
100us
1ms
10ms
100ms
0.01
0.1
1
0.00001
0.0001
0.001
0.01
0.1
1
t , Pulse Width (s)
N
o
rmalize
d
T
h
e
rmal
Re
spon
se
(
R
th
jc
)
PDM
Duty factor = t/T
Peak Tj = PDM x Rthjc + TC
t
T
0.02
0.01
0.05
0.1
0.2
Duty factor=0.5
Single Pulse
0
2
4
6
8
10
12
14
0
5
10
15
20
25
30
35
40
Q G , Total Gate Charge (nC)
V
GS
,
G
a
te
to
S
o
u
rc
e
Voltage
(
V
)
V DS =16V
V DS =20V
V DS =24V
I D =28A
100
1000
10000
1
5
9
13
17
21
25
29
V DS , Drain-to-Source Voltage (V)
C
(
p
F)
f=1.0MHz
C iss
C oss
C rss
td(on) tr
td(off) t
f
VDS
VGS
10%
90%
Q
VG
5V
QGS
QGD
QG
Charge
相关PDF资料
PDF描述
AP60N03GH 55 A, 30 V, 0.0135 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252
AP60T03GJ 45 A, 30 V, 0.012 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251
AP60T03GH 45 A, 30 V, 0.012 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252
AP60T03GP 45 A, 30 V, 0.012 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
AP60T03GS 45 A, 30 V, 0.012 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
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