- 您现在的位置：买卖IC网 > PDF目录36695 > AP60T03GH (ADVANCED POWER ELECTRONICS CORP) 45 A, 30 V, 0.012 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252 PDF资料下载
参数资料
| 型号： | AP60T03GH |
| 厂商： | ADVANCED POWER ELECTRONICS CORP |
| 元件分类： | JFETs |
| 英文描述： | 45 A, 30 V, 0.012 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252 |
| 封装： | ROHS COMPLIANT PACKAGE-3 |
| 文件页数： | 3/4页 |
| 文件大小： | 98K |
| 代理商： | AP60T03GH |
AP60T03GH/J
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
Fig 5. Forward Characteristic of
Fig 6. Gate Threshold Voltage v.s.
Reverse Diode
Junction Temperature
3
0
30
60
90
01
23
45
V DS , Drain-to-Source Voltage (V)
I
D
,
Dr
a
in
C
u
rr
e
nt
(A
)
T C =175
o C
10V
8.0V
6.0V
5.0V
V G =4.0V
0
25
50
75
100
125
01234
V DS , Drain-to-Source Voltage (V)
I
D
,
Dr
a
in
C
u
rr
e
nt
(A
)
T C =25
o C
10V
8.0V
6.0V
5.0V
V G =4.0V
0.4
0.8
1.2
1.6
2
-50
25
100
175
T j , Junction Temperature (
o C)
N
o
rmalize
d
R
DS(ON)
I D =20A
V G =10V
0
20
40
60
80
246
8
10
V GS , Gate-to-Source Voltage (V)
R
DS(ON)
(m
Ω
)
I D =15A
T C =25 ℃
0.1
1
10
100
0
0.5
1
1.5
V SD , Source-to-Drain Voltage (V)
I
S(A
)
T j =25
o C
T j =175
o C
0.3
0.8
1.3
1.8
2.3
2.8
-50
25
100
175
T j , Junction Temperature (
o C )
V
GS(t
h)
(V
)
相关PDF资料 |
PDF描述 |
|---|---|
| AP60T03GP | 45 A, 30 V, 0.012 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| AP60T03GS | 45 A, 30 V, 0.012 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB |
| AP60T06GJ-HF | 46 A, 55 V, 0.012 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251 |
| AP60T06GP-HF | 46 A, 55 V, 0.012 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| AP62T03GH | 54 A, 30 V, 0.012 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| AP60T03GH/J | 制造商:A-POWER 制造商全称:Advanced Power Electronics Corp. 功能描述:N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP60T03GH-HF-3TR | 制造商:ADVANCED POWER ELECTRONICS CORP 功能描述:MOSFET NCH 30V 12MOHM TO-252 制造商:ADVANCED POWER ELECTRONICS CORP 功能描述:MOSFET, NCH, 30V, 12MOHM, TO-252 制造商:ADVANCED POWER ELECTRONICS CORP 功能描述:MOSFET, NCH, 30V, 12MOHM, TO-252, Transistor Polarity:N Channel, Continuous Drain Current Id:45A, Drain Source Voltage Vds:30V, On Resistance Rds(on):0.012ohm, Rds(on) Test Voltage Vgs:10V, Power Dissipation Pd:44W, Operating , RoHS Compliant: Yes 制造商:APEC (ADVANCED POWER ELECTRONICS CORP) 功能描述:MOSFET, NCH, 30V, 12MOHM, TO-252, Transistor Polarity:N Channel, Continuous Drai |
| AP60T03GI | 制造商:A-POWER 制造商全称:Advanced Power Electronics Corp. 功能描述:Simple Drive Requirement Low Gate Charge |
| AP60T03GJ | 制造商:A-POWER 制造商全称:Advanced Power Electronics Corp. 功能描述:N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP60T03GJ-HF-3TB | 制造商:ADVANCED POWER ELECTRONICS CORP 功能描述:MOSFET NCH 30V 12MOHM TO-251 制造商:ADVANCED POWER ELECTRONICS CORP 功能描述:MOSFET, NCH, 30V, 12MOHM, TO-251 制造商:ADVANCED POWER ELECTRONICS CORP 功能描述:MOSFET, NCH, 30V, 12MOHM, TO-251, Transistor Polarity:N Channel, Continuous Drain Current Id:45A, Drain Source Voltage Vds:30V, On Resistance Rds(on):0.012ohm, Rds(on) Test Voltage Vgs:10V, Power Dissipation Pd:44W, Operating , RoHS Compliant: Yes 制造商:APEC (ADVANCED POWER ELECTRONICS CORP) 功能描述:MOSFET, NCH, 30V, 12MOHM, TO-251, Transistor Polarity:N Channel, Continuous Drai |
发布紧急采购，3分钟左右您将得到回复。