- 您现在的位置：买卖IC网 > PDF目录57941 > AP60T03GI (ADVANCED POWER ELECTRONICS CORP) 45 A, 30 V, 0.012 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB PDF资料下载
参数资料
| 型号： | AP60T03GI |
| 厂商： | ADVANCED POWER ELECTRONICS CORP |
| 元件分类： | JFETs |
| 英文描述： | 45 A, 30 V, 0.012 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封装： | ROHS COMPLIANT, TO-220CFM, 3 PIN |
| 文件页数： | 4/5页 |
| 文件大小： | 121K |
| 代理商： | AP60T03GI |
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
0.31
trr
Qrr
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
Fig 11. Switching Time Waveform
Fig 12. Gate Charge Waveform
4
AP60T03GI
100
1000
10000
1
5
9
13
17
21
25
29
V DS , Drain-to-Source Voltage (V)
C
(
p
F)
f=1.0MHz
C iss
C rss
C oss
td(on) tr
td(off) tf
VDS
VGS
10%
90%
Q
VG
4.5V
QGS
QGD
QG
Charge
0.001
0.01
0.1
1
0.00001
0.0001
0.001
0.01
0.1
1
10
t , Pulse Width (s)
N
o
rmalize
d
T
h
e
rmal
Re
spon
se
(
R
th
jc
)
PDM
Duty factor = t/T
Peak Tj = PDM x Rthjc + TC
t
T
0.02
0.01
0.05
0.1
0.2
Duty factor=0.5
Single Pulse
1
10
100
1000
0.1
1
10
100
V DS , Drain-to-Source Voltage (V)
I
D
(A
)
T C =25
o C
Single Pulse
100us
1ms
10ms
100ms
1s
DC
0
2
4
6
8
10
12
0
4
8
1216
2024
Q G , Total Gate Charge (nC)
V
GS
,
G
a
te
to
S
o
u
rc
e
Voltage
(
V
)
V DS =10V
V DS =15V
V DS =20V
I D =20 A
相关PDF资料 |
PDF描述 |
|---|---|
| AP60T10GI-HF | 34 A, 100 V, 0.018 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| AP60U02GH | 40 A, 25 V, 0.012 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252 |
| AP640R1-00 | 18000 MHz - 40000 MHz RF/MICROWAVE SGL POLE SGL THROW SWITCH, 1.3 dB INSERTION LOSS |
| AP6679BGH-HF | 63 A, 30 V, 0.009 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252 |
| AP6679BGJ-HF | 63 A, 30 V, 0.009 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-251 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| AP60T03GJ | 制造商:A-POWER 制造商全称:Advanced Power Electronics Corp. 功能描述:N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP60T03GJ-HF-3TB | 制造商:ADVANCED POWER ELECTRONICS CORP 功能描述:MOSFET NCH 30V 12MOHM TO-251 制造商:ADVANCED POWER ELECTRONICS CORP 功能描述:MOSFET, NCH, 30V, 12MOHM, TO-251 制造商:ADVANCED POWER ELECTRONICS CORP 功能描述:MOSFET, NCH, 30V, 12MOHM, TO-251, Transistor Polarity:N Channel, Continuous Drain Current Id:45A, Drain Source Voltage Vds:30V, On Resistance Rds(on):0.012ohm, Rds(on) Test Voltage Vgs:10V, Power Dissipation Pd:44W, Operating , RoHS Compliant: Yes 制造商:APEC (ADVANCED POWER ELECTRONICS CORP) 功能描述:MOSFET, NCH, 30V, 12MOHM, TO-251, Transistor Polarity:N Channel, Continuous Drai |
| AP60T03GP | 制造商:A-POWER 制造商全称:Advanced Power Electronics Corp. 功能描述:Simple Drive Requirement, Low Gate Charge |
| AP60T03GS | 制造商:A-POWER 制造商全称:Advanced Power Electronics Corp. 功能描述:Simple Drive Requirement, Low Gate Charge |
| AP60T06GJ-HF | 制造商:A-POWER 制造商全称:Advanced Power Electronics Corp. 功能描述:Simple Drive Requirement, Lower On-resistance, Fast Switching Characteristic |
发布紧急采购，3分钟左右您将得到回复。