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参数资料
| 型号： | AP622 |
| 厂商： | TRIQUINT SEMICONDUCTOR INC |
| 元件分类： | 放大器 |
| 英文描述： | 2110 MHz - 2170 MHz RF/MICROWAVE NARROW BAND MEDIUM POWER AMPLIFIER |
| 封装： | ROHS COMPLIANT, MODULE-6 |
| 文件页数： | 3/4页 |
| 文件大小： | 195K |
| 代理商： | AP622 |
Specifications and information are subject to change without notice
WJ Communications, Inc
Phone 1-800-WJ1-4401 FAX: 408-577-6621 e-mail: sales@wj.com Web site: www.wj.com, www.TriQuint.com
Page 3 of 4 March 2007
AP622
UMTS-band 4W HBT Amplifier Module
Performance Graphs
W-CDMA 3GPP Test Model 1+64 DPCH, 60% clipping, PAR = 8.6 dB @ 0.01% Probability, 3.84 MHz BW, Vcc = +28V, Icq = 120 mA
Notes:
1. Please note that for reliable operation, the evaluation board will have to
be mounted to a much larger heat sink during operation and in laboratory
environments to dissipate the power consumed by the device. The use of
a convection fan is also recommended in laboratory environments.
Details of the mounting holes used in the WJ heatsink are given on the
last page of this datasheet.
2. The area around the module underneath the PCB should not contain any
soldermask in order to maintain good RF grounding.
3. For proper and safe operation in the laboratory, the power-on sequencing
should be followed:
a. Connect RF In and Out
b. Connect the voltages and ground pins as shown in the circuit.
c. Apply the RF signal
d. Power down with the reverse sequence
Gain vs. Output Power vs. Frequency
WCDMA, Vcc = 28V, Icq = 120 mA, 25 C
25
26
27
28
29
30
22
23
24
25
26
27
Output Power (dBm)
Ga
in
(d
B
)
2110 MHz
2140 MHz
2170 MHz
ACLR1 vs. Output Power vs. Frequency
WCDMA, Vcc = 28V, Icq = 120 mA, 25 C
-60
-55
-50
-45
-40
22
23
24
25
26
27
Average Output Power (dBm)
AC
LR
1
(dB
c
)
2110 MHz
2140 MHz
2170 MHz
Efficiency vs. Output Power vs. Frequency
WCDMA, Vcc = 28V, Icq = 120 mA, 25 C
0
3
6
9
12
15
22
23
24
25
26
27
Average Output Power (dBm)
Co
ll
ecto
rE
fficien
cy
(%
)
2110 MHz
2140 MHz
2170 MHz
Icc vs. Output Power
WCDMA, Vcc = 28V, Icq = 120 mA, 25 C
120
130
140
150
160
170
22
23
24
25
26
27
Output Power (dBm)
Ic
c
(m
A
)
DNP
10
μF
DNP
0
10
μF
.01
μF
.01
μF
100pF
+2
8
V
+2
8
V
GND
+5
V
6
5
4
2
3
1
RF IN
RF OUT
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