参数资料
型号: AP6677GH
厂商: ADVANCED POWER ELECTRONICS CORP
元件分类: JFETs
英文描述: 60 A, 40 V, 0.0123 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252
封装: ROHS COMPLIANT PACKAGE-3
文件页数: 1/5页
文件大小: 148K
代理商: AP6677GH
Advanced Power
P-CHANNEL ENHANCEMENT MODE
Electronics Corp.
POWER MOSFET
▼ Lower On-resistance
BVDSS
-40V
▼ Simple Drive Requirement
RDS(ON)
12.3mΩ
▼ Fast Switching Characteristic
ID
-60A
Description
Absolute Maximum Ratings
Symbol
Units
VDS
V
VGS
V
ID@TC=25℃
A
ID@TC=100℃
A
IDM
A
PD@TC=25℃
W
TSTG
TJ
Symbol
Value
Units
Rthj-c
Maximum Thermal Resistance Junction-case
1.8
/W
Rthj-a
62.5
/W
Data and specifications subject to change without notice
Maximum Thermal Resistance, Junction-ambient (PCB mount)
3
200901221
1
AP6677GH
Rating
-40
+20
-60
RoHS-compliant Product
Continuous Drain Current, VGS @ 10V
-38
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, VGS @ 10V
Parameter
Total Power Dissipation
Operating Junction Temperature Range
Storage Temperature Range
-55 to 150
Pulsed Drain Current
1
-240
Thermal Data
-55 to 150
69
G
D
S
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
The TO-252 package is widely preferred for commercial-industrial
surface mount applications and suited for low voltage applications
such as DC/DC converters.
G
D
S
TO-252(H)
相关PDF资料
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AP6679GH 75 A, 30 V, 0.009 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252
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