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参数资料
| 型号： | AP6679GR |
| 厂商： | ADVANCED POWER ELECTRONICS CORP |
| 元件分类： | JFETs |
| 英文描述： | 75 A, 30 V, 0.009 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-262AA |
| 封装： | ROHS COMPLIANT, TO-262, 3 PIN |
| 文件页数： | 1/1页 |
| 文件大小： | 149K |
| 代理商： | AP6679GR |
Advanced Power
P-CHANNEL ENHANCEMENT MODE
Electronics Corp.
POWER MOSFET
▼ Lower On-resistance
BVDSS
-30V
▼ Simple Drive Requirement
RDS(ON)
9mΩ
▼ Fast Switching Characteristic
ID
-75A
Description
Absolute Maximum Ratings
Symbol
Units
VDS
V
VGS
V
ID@TC=25℃
A
ID@TC=100℃
A
IDM
A
PD@TC=25℃
W
W/℃
TSTG
℃
TJ
℃
Symbol
Value
Unit
Rthj-c
Maximum Thermal Resistance, Junction-case
1.4
℃
/W
Rthj-a
Maximum Thermal Resistance, Junction-ambient
62
℃
/W
Data and specifications subject to change without notice
Parameter
Total Power Dissipation
Operating Junction Temperature Range
Storage Temperature Range
Linear Derating Factor
Thermal Data
Continuous Drain Current, VGS @ 10V
-51
Pulsed Drain Current
1
-300
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, VGS @ 10V
3
AP6679GR
Rating
-30
+25
-75
0.71
89
2008012303
RoHS-compliant Product
-55 to 150
1
G
D
S
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
The TO-262 package is widely preferred for commercial-industrial
through-hole applications and suited for low voltage applications such
as DC/DC converters.
G
D
S
TO-262(R)
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PDF描述 |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| AP6679GS | 制造商:A-POWER 制造商全称:Advanced Power Electronics Corp. 功能描述:P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP6679GSP-HF | 制造商:A-POWER 制造商全称:Advanced Power Electronics Corp. 功能描述:Lower On-resistance, Simple Drive Requirement |
| AP6679P | 制造商:A-POWER 制造商全称:Advanced Power Electronics Corp. 功能描述:P-CHANNEL ENHANCEMENT MODE |
| AP6679S | 制造商:A-POWER 制造商全称:Advanced Power Electronics Corp. 功能描述:P-CHANNEL ENHANCEMENT MODE |
| AP6680AGM | 制造商:A-POWER 制造商全称:Advanced Power Electronics Corp. 功能描述:N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
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