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参数资料
| 型号： | AP6925GY |
| 厂商： | ADVANCED POWER ELECTRONICS CORP |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 1600 mA, 16 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封装： | ROHS COMPLIANT PACKAGE-6 |
| 文件页数： | 4/5页 |
| 文件大小： | 160K |
| 代理商： | AP6925GY |
AP6925GY
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
SCHOTTKY DIODE
Fig 1. Reverse Leakage Current
Fig 2. Forward Voltage Drop
v.s. Junction Temperature
4
0
2
4
6
8
10
0246
8
10
12
Q G , Total Gate Charge (nC)
-V
GS
,Ga
te
to
So
urce
Vo
lta
ge
(
V
)
V DS = -12V
I D = -1.6A
10
100
1000
1
5
9
13
17
21
25
29
-V DS , Drain-to-Source Voltage (V)
C
(
pF)
f=1.0MHz
C iss
C oss
C rss
0.001
0.01
0.1
1
0.0001
0.001
0.01
0.1
1
10
100
t , Pulse Width (s)
No
rm
alized
T
herm
al
Resp
onse
(
R
th
ja
)
0.01
0.05
0.1
0.2
Duty factor=0.5
Single Pulse
PDM
Duty factor = t/T
Peak Tj = PDM x Rthja + Ta
Rthja = 240℃/W
t
T
0.02
0.01
0.1
1
10
0.1
1
10
100
-V DS , Drain-to-Source Voltage (V)
-I
D
(A
)
T A =25
o C
Single Pulse
1ms
10ms
100ms
1s
DC
0.001
0.01
0.1
1
10
25
50
75
100
125
T j , Junction Temperature (
o C)
I R
,Re
ve
rse
Curre
nt
(
m
A)
20V
16V
0.1
1
0
0.2
0.4
0.6
0.8
V F , Forward Voltage Drop (V)
I F
,Forward
Curre
nt
(
A)
T j =125
o CT
j =25
o C
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