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参数资料
| 型号： | AP6950GYT-HF |
| 厂商： | ADVANCED POWER ELECTRONICS CORP |
| 元件分类： | JFETs |
| 英文描述： | 21 A, 30 V, 0.018 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | 3 X 3 MM, HALOGEN FREE AND ROHS COMPLIANT, PMPAK-8 |
| 文件页数： | 2/7页 |
| 文件大小： | 128K |
| 代理商： | AP6950GYT-HF |
CH-1 Electrical Characteristics@Tj=25
oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ. Max. Units
BVDSS
Drain-Source Breakdown Voltage
VGS=0V, ID=250uA
30
-
V
RDS(ON)
Static Drain-Source On-Resistance
2
VGS=10V, ID=8A
-
14
18
m
VGS=4.5V, ID=5A
-
23.2
30
m
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250uA
1
1.4
3
V
gfs
Forward Transconductance
VDS=10V, ID=8A
-
14
-
S
IDSS
Drain-Source Leakage Current
VDS=24V, VGS=0V
-
10
uA
IGSS
Gate-Source Leakage
VGS=+20V, VDS=0V
-
+100
nA
Qg
Total Gate Charge
ID=8A
-
6
9.6
nC
Qgs
Gate-Source Charge
VDS=15V
-
2.5
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=4.5V
-
3
-
nC
td(on)
Turn-on Delay Time
VDS=15V
-
6.5
-
ns
tr
Rise Time
ID=1A
-
6
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω
-15
-
ns
tf
Fall Time
VGS=10V
-
3
-
ns
Ciss
Input Capacitance
VGS=0V
-
450
720
pF
Coss
Output Capacitance
VDS=15V
-
90
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
75
-
pF
Rg
Gate Resistance
f=1.0MHz
-
1.2
-
Ω
Source-Drain Diode
Symbol
Parameter
Test Conditions
Min.
Typ. Max. Units
VSD
Forward On Voltage
2
IS=8A, VGS=0V
-
1.2
V
trr
Reverse Recovery Time
IS=8A, VGS=0V,
-
13
-
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/s
-
6
-
nC
AP6950GYT-HF
2
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相关代理商/技术参数 |
参数描述 |
|---|---|
| AP6970GN2-HF | 制造商:A-POWER 制造商全称:Advanced Power Electronics Corp. 功能描述:Bottom Exposed DFN, Lower Profile |
| AP6-9739-11 | 制造商:Sensata Technologies 功能描述:AP6-9739-11 /Pole # 1 /Prod Family: 0202 |
| AP6-9739-12 | 制造商:Sensata Technologies 功能描述:AP6-9739-12 /Pole # 1 /Prod Family: 0202 |
| AP6-9739-13 | 制造商:Sensata Technologies 功能描述:AP6-9739-13 /Pole # 1 /Prod Family: 0202 |
| AP6-9739-17 | 制造商:Sensata Technologies 功能描述:AP6-9739-17 /Pole # 1 /Prod Family: 0202 |
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