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参数资料
| 型号： | AP70L02GP |
| 厂商： | ADVANCED POWER ELECTRONICS CORP |
| 元件分类： | JFETs |
| 英文描述： | 66 A, 25 V, 0.009 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封装： | ROHS COMPLIANT, TO-220, 3 PIN |
| 文件页数： | 4/6页 |
| 文件大小： | 107K |
| 代理商： | AP70L02GP |
AP70L02GS/P
Fig 5. Maximum Drain Current v.s.
Fig 6. Typical Power Dissipation
Case Temperature
Fig 7. Maximum Safe Operating Area
Fig 8. Effective Transient Thermal Impedance
4
0
10
20
30
40
50
60
70
80
25
50
75
100
125
150
T c , Case Temperature (
o C)
I
D
,
Dra
in
C
u
rre
nt
(A
)
0
10
20
30
40
50
60
70
80
0
50
100
150
T c ,Case Temperature (
o C)
P
D
(W
)
1
10
100
1000
1
10
100
V DS (V)
I
D
(A
)
T c =25
o C
Single Pulse
100us
1ms
10ms
100ms
10us
0.01
0.1
1
0.00001
0.0001
0.001
0.01
0.1
1
t , Pulse Width (s)
N
o
rm
aliz
ed
T
h
er
m
a
lRes
pon
se
(
R
th
jc
)
PDM
Duty factor = t/T
Peak Tj = PDM x Rthjc + TC
t
T
0.02
0.01
0.05
0.1
0.2
DUTY=0.5
SINGLE PULSE
相关PDF资料 |
PDF描述 |
|---|---|
| AP70T03AP | 60 A, 30 V, 0.009 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| AP70T03AS | 60 A, 30 V, 0.009 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB |
| AP70T03GJ-HF | 60 A, 30 V, 0.009 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251 |
| AP70T03GH-HF | 60 A, 30 V, 0.009 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252 |
| AP72T02GH-HF | 62 A, 25 V, 0.009 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| AP70L02GS | 制造商:A-POWER 制造商全称:Advanced Power Electronics Corp. 功能描述:N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP70T03AH | 制造商:A-POWER 制造商全称:Advanced Power Electronics Corp. 功能描述:Simple Drive Requirement, Low Gate Charge |
| AP70T03AJ | 制造商:A-POWER 制造商全称:Advanced Power Electronics Corp. 功能描述:Simple Drive Requirement, Low Gate Charge |
| AP70T03AS | 制造商:A-POWER 制造商全称:Advanced Power Electronics Corp. 功能描述:Simple Drive Requirement, Low Gate Charge |
| AP70T03GH | 制造商:A-POWER 制造商全称:Advanced Power Electronics Corp. 功能描述:N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
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