参数资料
型号: AP70T03AS
厂商: ADVANCED POWER ELECTRONICS CORP
元件分类: JFETs
英文描述: 60 A, 30 V, 0.009 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
封装: TO-263, 3 PIN
文件页数: 4/4页
文件大小: 74K
代理商: AP70T03AS
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
Fig 9. Maximum Safe Operating Area
Fig10. Effective Transient Thermal Impedance
Fig 11. Switching Time Waveform
Fig 12. Gate Charge Waveform
AP70T03AS/P
1
10
100
1000
0.1
1
10
100
V DS , Drain-to-Source Voltage (V)
I
D
(A)
T C =25
o C
Single Pulse
10us
100us
1ms
10ms
100ms
DC
0.01
0.1
1
0.00001
0.0001
0.001
0.01
0.1
1
t , Pulse Width (s)
No
rm
a
lized
T
h
erm
a
lResp
o
n
se
(
R
thjc
)
PDM
Duty Factor = t/T
Peak Tj = PDM x Rthjc + TC
t
T
0.02
0.01
0.05
0.1
0.2
Duty Factor = 0.5
Single Pulse
0
3
6
9
12
010
20
30
Q G , Total Gate Charge (nC)
V
GS
,
Gate
to
S
o
u
rc
eV
oltage
(
V
)
I D =33A
V DS =16V
V DS =20V
V DS =24V
10
100
1000
10000
1
8
15
22
29
V DS , Drain-to-Source Voltage (V)
C
(p
F)
f=1.0MHz
Ciss
Coss
Crss
td(on) tr
td(off) t
f
VDS
VGS
10%
90%
Q
VG
4.5V
QGS
QGD
QG
Charge
相关PDF资料
PDF描述
AP70T03GJ-HF 60 A, 30 V, 0.009 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251
AP70T03GH-HF 60 A, 30 V, 0.009 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252
AP72T02GH-HF 62 A, 25 V, 0.009 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252
AP72T02GJ-HF 62 A, 25 V, 0.009 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251
AP72T02GH 62 A, 25 V, 0.009 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252
相关代理商/技术参数
参数描述
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