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参数资料
| 型号： | AP70U02GH |
| 厂商： | ADVANCED POWER ELECTRONICS CORP |
| 元件分类： | JFETs |
| 英文描述： | 60 A, 25 V, 0.009 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252 |
| 封装： | ROHS COMPLIANT PACKAGE-3 |
| 文件页数： | 1/5页 |
| 文件大小： | 126K |
| 代理商： | AP70U02GH |
Advanced Power
N-CHANNEL ENHANCEMENT MODE
Electronics Corp.
POWER MOSFET
▼ Simple Drive Requirement
BVDSS
25V
▼ Low On-resistance
RDS(ON)
9mΩ
▼ Fast Switching Characteristic
ID
60A
▼ RoHS Compliant
Description
Absolute Maximum Ratings
Symbol
Units
VDS
V
VGS
V
ID@TC=25℃
A
ID@TC=100℃
A
IDM
A
PD@TC=25℃
W
W/℃
TSTG
℃
TJ
℃
Symbol
Value
Units
Rthj-c
Thermal Resistance Junction-case
Max.
3.2
℃/W
Rthj-a
Thermal Resistance Junction-ambient
Max.
110
℃/W
Data and specifications subject to change without notice
200831071pre-1/4
AP70U02GH
Preliminary
Parameter
Rating
Drain-Source Voltage
25
Gate-Source Voltage
± 20
Continuous Drain Current, VGS @ 10V
60
Continuous Drain Current, VGS @ 10V
41
Pulsed Drain Current
1
220
Total Power Dissipation
47
-55 to 175
Operating Junction Temperature Range
-55 to 175
Linear Derating Factor
0.31
Thermal Data
.
Storage Temperature Range
G
D
S
TO-252(H)
G
D
S
The Advanced Power MOSFETs from APEC provide the designer with
the best combination of fast switching, ruggedized device design, low
on-resistance and cost-effectiveness.
The TO-252 package is universally preferred for all commercial-
industrial surface mount applications and suited for low voltage
applications such as DC/DC converters.
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