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参数资料
| 型号： | AP80T10GR-HF |
| 厂商： | ADVANCED POWER ELECTRONICS CORP |
| 元件分类： | JFETs |
| 英文描述： | 80 A, 100 V, 0.0095 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA |
| 封装： | HALOGEN FREE AND ROHS COMPLIANT, TO-262, 3 PIN |
| 文件页数： | 1/4页 |
| 文件大小： | 92K |
| 代理商： | AP80T10GR-HF |
Advanced Power
N-CHANNEL ENHANCEMENT MODE
Electronics Corp.
POWER MOSFET
▼ Simple Drive Requirement
BVDSS
100V
▼ Low On-resistance
RDS(ON)
9.5mΩ
▼ Fast Switching Characteristic
ID
85A
▼ RoHS Compliant & Halogen-Free
Description
Absolute Maximum Ratings
Symbol
Units
VDS
V
VGS
V
ID@TC=25℃
A
ID@TC=25℃
A
ID@TC=100℃
A
IDM
A
PD@TC=25℃
W
TSTG
℃
TJ
℃
Symbol
Value
Units
Rthj-c
Maximum Thermal Resistance, Junction-case
0.9
℃
/W
Rthj-a
Maximum Thermal Resistance, Junction-ambient
62
℃
/W
Data and specifications subject to change without notice
Operating Junction Temperature Range
-55 to 175
201008171
Thermal Data
Parameter
1
Storage Temperature Range
Continuous Drain Current, VGS @ 10V
60
Pulsed Drain Current
1
300
Total Power Dissipation
166
-55 to 175
Gate-Source Voltage
+20
Continuous Drain Current, VGS @ 10V
3
80
Continuous Drain Current (Chip)
Parameter
Rating
Drain-Source Voltage
100
AP80T10GR-HF
Halogen-Free Product
85
G
D
S
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
The TO-262 package is widely preferred for commercial-industrial
through-hole applications and suited for low voltage applications such
as DC/DC converters.
G
D
S
TO-262(R)
相关PDF资料 |
PDF描述 |
|---|---|
| AP83T02GH-HF | 75 A, 25 V, 0.006 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252 |
| AP83T02GJ-HF | 75 A, 25 V, 0.006 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251 |
| AP83T03GMT-HF | 72 A, 30 V, 0.011 ohm, N-CHANNEL, Si, POWER, MOSFET |
| AP85T03GJ | 75 A, 30 V, 0.006 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251 |
| AP85T03GH | 75 A, 30 V, 0.006 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252 |
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