参数资料
型号: AP85T10GP-HF
厂商: ADVANCED POWER ELECTRONICS CORP
元件分类: JFETs
英文描述: 125 A, 100 V, 0.008 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
封装: HALOGEN FREE AND ROHS COMPLIANT, TO-220, 3 PIN
文件页数: 1/4页
文件大小: 59K
代理商: AP85T10GP-HF
Advanced Power
N-CHANNEL ENHANCEMENT MODE
Electronics Corp.
POWER MOSFET
▼ Simple Drive Requirement
BVDSS
100V
▼ Lower On-resistance
RDS(ON)
8mΩ
▼ Fast Switching Characteristic
ID
125A
▼ RoHS Compliant & Halogen-Free
Description
Absolute Maximum Ratings
Symbol
Units
VDS
V
VGS
V
ID@TC=25℃
A
ID@TC=25℃
A
ID@TC=100℃
A
IDM
A
PD@TC=25℃
W
TSTG
TJ
Symbol
Value
Units
Rthj-c
Maximum Thermal Resistance, Junction-case
0.5
℃/W
Rthj-a
Maximum Thermal Resistance, Junction-ambient
62
℃/W
Data and specifications subject to change without notice
AP85T10GP-HF
Halogen-Free Product
125
200912221
Parameter
Rating
Drain-Source Voltage
100
Gate-Source Voltage
+20
Continuous Drain Current, VGS @ 10V
3
120
Continuous Drain Current (Chip)
Parameter
1
Storage Temperature Range
Continuous Drain Current, VGS @ 10V
88
Pulsed Drain Current
1
300
Total Power Dissipation
300
-55 to 175
Operating Junction Temperature Range
-55 to 175
Thermal Data
G
D
S
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
The TO-220 package is widely preferred for commercial-industrial
power applications and suited for low voltage applications such as
DC/DC converters.
G
D
S
TO-220(P)
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