参数资料
型号: AP92T03GJ
厂商: ADVANCED POWER ELECTRONICS CORP
元件分类: JFETs
英文描述: 75 A, 30 V, 0.004 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251
封装: ROHS COMPLIANT PACKAGE-3
文件页数: 3/5页
文件大小: 246K
代理商: AP92T03GJ
AP92T03GH/J
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
Fig 5. Forward Characteristic of
Fig 6. On-Resistance vs.
Reverse Diode
Drain Current
3
0
40
80
120
160
200
240
0.0
2.0
4.0
6.0
8.0
V DS , Drain-to-Source Voltage (V)
I D
,Dr
ai
n
C
u
rr
ent
(A
)
T C =150
o C
10V
7.0V
5.0V
4.5V
V G =3.0V
0
40
80
120
160
200
240
280
0.0
2.0
4.0
6.0
8.0
V DS , Drain-to-Source Voltage (V)
I D
,Dr
ai
n
C
u
rr
ent
(A
)
T C =25
o C
10V
7.0V
5.0V
4.5V
V G =3.0V
0.4
0.8
1.2
1.6
2
25
50
75
100
125
150
T j , Junction Temperature (
o C)
N
ormalize
dR
DS(ON)
I D =40A
V G =10V
0
10
20
30
40
0
0.5
1
1.5
V SD , Source-to-Drain Voltage (V)
I S
(A
)
T j =25
o C
T j =150
o C
2.0
3.0
4.0
5.0
6.0
0
2040
6080
100
I D , Drain Current (A)
R
DS(ON)
(m
)
V GS =4.5V
V GS =10V
0
2
4
6
8
10
02
46
8
10
V GS , Gate-to-Source Voltage (V)
R
DS(ON)
(m
)
I D =30A
T C =25
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