参数资料
型号: AP9412GH
厂商: ADVANCED POWER ELECTRONICS CORP
元件分类: JFETs
英文描述: 73 A, 30 V, 0.006 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252
封装: ROHS COMPLIANT PACKAGE-3
文件页数: 1/4页
文件大小: 64K
代理商: AP9412GH
Advanced Power
N-CHANNEL ENHANCEMENT MODE
Electronics Corp.
POWER MOSFET
▼ Lower Gate Charge
BVDSS
30V
▼ Simple Drive Requirement
RDS(ON)
6mΩ
▼ Fast Switching Characteristic
ID
73A
Description
Absolute Maximum Ratings
Symbol
Units
VDS
V
VGS
V
ID@TC=25℃
A
ID@TC=100℃
A
IDM
A
PD@TC=25℃
W
W/℃
TSTG
TJ
Symbol
Value
Units
Rthj-c
Thermal Resistance Junction-case
Max.
2.8
℃/W
Rthj-a
Thermal Resistance Junction-ambient
Max.
110
℃/W
Data & specifications subject to change without notice
200509072-1/4
Thermal Data
Parameter
Linear Derating Factor
0.36
Storage Temperature Range
Operating Junction Temperature Range
-55 to 175
Total Power Dissipation
Gate-Source Voltage
±20
Continuous Drain Current
73
Continuous Drain Current
52
Pulsed Drain Current
1
250
Parameter
Rating
Drain-Source Voltage
30
AP9412GH/J
53.6
RoHS-compliant Product
G
D
S
TO-252(H)
The Advanced Power MOSFETs from APEC provide the designer with
the best combination of fast switching, ruggedized device design, low
on-resistance and cost-effectiveness.
The TO-252 package is universally preferred for all commercial-
industrial surface mount applications and suited for low voltage
applications such as DC/DC converters. The through-hole version
(AP9412GJ) are available for low-profile applications.
G
D
S
TO-251(J)
G
D
S
相关PDF资料
PDF描述
AP9412GP 73 A, 30 V, 0.006 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
AP9431GH-HF 23.5 A, 55 V, 0.024 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252
AP9435GJ 20 A, 30 V, 0.05 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-251
AP9435GH 20 A, 30 V, 0.05 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252
AP9466GJ 40 A, 40 V, 0.0135 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251
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