参数资料
型号: AP9418GM
厂商: ADVANCED POWER ELECTRONICS CORP
元件分类: JFETs
英文描述: 35 V, 0.004 ohm, N-CHANNEL, Si, POWER, MOSFET
封装: ROHS COMPLIANT, SOP-8
文件页数: 1/5页
文件大小: 200K
代理商: AP9418GM
Advanced Power
N-CHANNEL ENHANCEMENT MODE
Electronics Corp.
POWER MOSFET
▼ Simple Drive Requirement
BVDSS
35V
▼ Ultra_Low On-resistance
RDS(ON)
4mΩ
▼ Fast Switching Characteristic
ID
24A
Description
Absolute Maximum Ratings
Symbol
Units
VDS
V
VGS
V
ID@TA=25℃
A
ID@TA=70℃
A
IDM
A
PD@TA=25℃
W
TSTG
TJ
Symbol
Value
Unit
Rthj-a
Maximum Thermal Resistance, Junction-ambient
3
35
/W
Data and specifications subject to change without notice
200809303
1
AP9418GM
Rating
RoHS-compliant Product
35
±20
24
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
3
-55 to 150
Continuous Drain Current
3
19
Pulsed Drain Current
1
60
Storage Temperature Range
3.6
-55 to 150
Thermal Data
Parameter
Total Power Dissipation
Operating Junction Temperature Range
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
The SO-8 package is widely preferred for commercial-industrial
surface mount applications and suited for low voltage applications
such as DC/DC converters.
S
G
D
SO-8
G
D
S
相关PDF资料
PDF描述
AP9420GM-HF 30 V, 0.003 ohm, N-CHANNEL, Si, POWER, MOSFET
AP9424GYT-HF 30 V, 0.0065 ohm, N-CHANNEL, Si, POWER, MOSFET
AP9432GYT-HF 30 V, 0.012 ohm, N-CHANNEL, Si, POWER, MOSFET
AP9452AGG-HF 20 V, 0.05 ohm, N-CHANNEL, Si, POWER, MOSFET
AP9465GEM 40 V, 0.025 ohm, N-CHANNEL, Si, POWER, MOSFET
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