参数资料
型号: AP9467AGM
厂商: ADVANCED POWER ELECTRONICS CORP
元件分类: JFETs
英文描述: 40 V, 0.0115 ohm, N-CHANNEL, Si, POWER, MOSFET
封装: ROHS COMPLIANT, SOP-8
文件页数: 4/4页
文件大小: 93K
代理商: AP9467AGM
AP9467AGM
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
Fig 11. Switching Time Waveform
Fig 12. Gate Charge Waveform
4
Q
VG
4.5V
QGS
QGD
QG
Charge
0
2
4
6
8
10
0
4
8
12
16
20
Q G , Total Gate Charge (nC)
V
GS
,
G
a
te
to
S
o
u
rc
e
Voltage
(
V
)
V DS =20 V
I D =10 A
0
200
400
600
800
1
5
9
13
17
21
25
29
V DS , Drain-to-Source Voltage (V)
C
(
p
F)
f=1.0MHz
C iss
C oss
C rss
0.01
0.1
1
10
100
0.01
0.1
1
10
100
V DS , Drain-to-Source Voltage (V)
I
D
(A
)
T A =25
o C
Single Pulse
100us
1ms
10ms
100ms
1s
DC
0.001
0.01
0.1
1
0.0001
0.001
0.01
0.1
1
10
100
1000
t , Pulse Width (s)
N
o
rmalize
d
T
h
e
rmal
Re
spon
se
(
R
th
ja
)
PDM
Duty factor = t/T
Peak Tj = PDM x Rthja + Ta
Rthja=125
oC/W
t
T
0.02
0.01
0.05
0.1
0.2
Duty factor=0.5
Single Pulse
td(on) tr
td(off) tf
VDS
VGS
10%
90%
相关PDF资料
PDF描述
AP9467GJ-HF 52 A, 40 V, 0.011 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251
AP9467GH-HF 52 A, 40 V, 0.011 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252
AP9467GJ 52 A, 40 V, 0.011 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251
AP9467GH 52 A, 40 V, 0.011 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252
AP9467GS 52 A, 40 V, 0.011 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
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