参数资料
型号: AP9467GH-HF
厂商: ADVANCED POWER ELECTRONICS CORP
元件分类: JFETs
英文描述: 52 A, 40 V, 0.011 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252
封装: HALOGEN FREE AND ROHS COMPLIANT PACKAGE-3
文件页数: 4/4页
文件大小: 97K
代理商: AP9467GH-HF
AP9467GH/J-HF
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
Fig 11. Switching Time Waveform
Fig 12. Gate Charge Waveform
4
0
2
4
6
8
0
4
8
12
16
20
Q G , Total Gate Charge (nC)
V
GS
,
G
a
te
to
S
o
u
rc
e
Voltage
(
V
)
V DS =32V
I D =30A
td(on) tr
td(off) tf
VDS
VGS
10%
90%
Q
VG
4.5V
QGS
QGD
QG
Charge
0
400
800
1200
1600
1
5
9
13
17
21
25
29
V DS , Drain-to-Source Voltage (V)
C
(
p
F)
f=1.0MHz
C iss
C oss
C rss
0.1
1
10
100
1000
0.1
1
10
100
V DS , Drain-to-Source Voltage (V)
I
D
(A
)
T C =25
o C
Single Pulse
100us
1ms
10ms
100ms
DC
0.01
0.1
1
0.00001
0.0001
0.001
0.01
0.1
1
t , Pulse Width (s)
N
o
rmalize
d
T
h
e
rmal
Re
spon
se
(
R
th
jc
)
PDM
Duty factor = t/T
Peak Tj = PDM x Rthjc + TC
t
T
0.02
0.01
0.05
0.1
0.2
Duty factor=0.5
Single Pulse
Operation in this
area limited by
RDS(ON)
相关PDF资料
PDF描述
AP9467GJ 52 A, 40 V, 0.011 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251
AP9467GH 52 A, 40 V, 0.011 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252
AP9467GS 52 A, 40 V, 0.011 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
AP9468GM 40 V, 0.007 ohm, N-CHANNEL, Si, POWER, MOSFET
AP9469GJ 18 A, 40 V, 0.05 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251
相关代理商/技术参数
参数描述
AP9467GJ-HF 制造商:A-POWER 制造商全称:Advanced Power Electronics Corp. 功能描述:N-CHANNEL ENHANCEMENT MODE POWER MOSFET
AP9467GM 制造商:A-POWER 制造商全称:Advanced Power Electronics Corp. 功能描述:N-CHANNEL ENHANCEMENT MODE POWER MOSFET
AP9467GS 制造商:A-POWER 制造商全称:Advanced Power Electronics Corp. 功能描述:N-CHANNEL ENHANCEMENT MODE POWER MOSFET
AP9468GH 制造商:A-POWER 制造商全称:Advanced Power Electronics Corp. 功能描述:N-CHANNEL ENHANCEMENT MODE POWER MOSFET
AP9468GHJ-HF 制造商:A-POWER 制造商全称:Advanced Power Electronics Corp. 功能描述:N-CHANNEL ENHANCEMENT MODE POWER MOSFET