参数资料
型号: AP9474GM
厂商: ADVANCED POWER ELECTRONICS CORP
元件分类: JFETs
英文描述: 12.8 A, 60 V, 0.0105 ohm, N-CHANNEL, Si, POWER, MOSFET
封装: ROHS COMPLIANT, SOP-8
文件页数: 1/4页
文件大小: 92K
代理商: AP9474GM
Advanced Power
N-CHANNEL ENHANCEMENT MODE
Electronics Corp.
POWER MOSFET
▼ Low On-resistance
BVDSS
60V
▼ Single Drive Requirement
RDS(ON)
10.5mΩ
▼ Surface Mount Package
ID
12.8A
Description
Absolute Maximum Ratings
Symbol
Units
VDS
V
VGS
V
ID@TA=25℃
A
ID@TA=70℃
A
IDM
A
PD@TA=25℃
W
TSTG
TJ
Symbol
Value
Unit
Rthj-a
50
/W
Data and specifications subject to change without notice
200902172
Maximum Thermal Resistance, Junction-ambient
3
Thermal Data
Parameter
Gate-Source Voltage
+20
Continuous Drain Current
3, V
GS @ 10V
12.8
9.6
Pulsed Drain Current
1
1
50
Operating Junction Temperature Range
-55 to 150
Storage Temperature Range
Total Power Dissipation
2.5
-55 to 150
AP9474GM
RoHS-compliant Product
Parameter
Rating
Drain-Source Voltage
60
Continuous Drain Current
3, V
GS @ 10V
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, ultra low on-resistance and
cost-effectiveness.
The SO-8 package is widely preferred for commercial-industrial
surface mount applications and suited for low voltage
applications such as DC/DC converters.
G
D
S
S
G
D
SO-8
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