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参数资料
| 型号： | AP9479GM-HF |
| 厂商： | ADVANCED POWER ELECTRONICS CORP |
| 元件分类： | JFETs |
| 英文描述： | 5.6 A, 60 V, 0.045 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | HALOGEN FREE AND ROHS COMPLIANT, SOP-8 |
| 文件页数： | 1/4页 |
| 文件大小： | 98K |
| 代理商： | AP9479GM-HF |
Advanced Power
N-CHANNEL ENHANCEMENT MODE
Electronics Corp.
POWER MOSFET
▼ Simple Drive Requirement
BVDSS
60V
▼ Lower Gate Charge
RDS(ON)
45mΩ
▼ Fast Switching Characteristic
ID
5.6A
▼ RoHS Compliant
Description
Absolute Maximum Ratings
Symbol
Units
VDS
V
VGS
V
ID@TA=25℃
A
ID@TA=70℃
A
IDM
A
PD@TA=25℃
W
W/℃
TSTG
℃
TJ
℃
Symbol
Value
Unit
Rthj-a
Maximum Thermal Resistance, Junction-ambient
3
50
℃
/W
Data and specifications subject to change without notice
Halogen-Free Product
1
AP9479GM-HF
Rating
60
+25
5.6
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
3
Continuous Drain Current
3
4.5
Pulsed Drain Current
1
30
Total Power Dissipation
2.5
-55 to 150
Operating Junction Temperature Range
-55 to 150
Linear Derating Factor
0.02
Storage Temperature Range
200810202
Thermal Data
Parameter
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
The SO-8 package is widely preferred for all commercial-industrial
surface mount applications and suited for low voltage applications
such as DC/DC converters.
G
D
S
S
G
D
SO-8
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