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参数资料
| 型号： | AP9487GM |
| 厂商： | ADVANCED POWER ELECTRONICS CORP |
| 元件分类： | JFETs |
| 英文描述： | 4 A, 80 V, 0.085 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | LEAD FREE, SOP-8 |
| 文件页数： | 4/4页 |
| 文件大小： | 70K |
| 代理商： | AP9487GM |
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
Fig 11. Transfer Characteristics
Fig 12. Gate Charge Waveform
AP9487GM
Q
VG
4.5V
QGS
QGD
QG
Charge
0
3
6
9
12
15
0
5
10
15
20
25
Q G , Total Gate Charge (nC)
V
GS
,
Gate
to
S
o
u
rc
eV
oltage
(
V
)
I D =4 A
V DS =40 V
V DS =50 V
V DS =64 V
10
100
1000
10000
1
5
9
131721
2529
V DS , Drain-to-Source Voltage (V)
C
(p
F)
f=1.0MHz
C iss
C oss
C rss
0.01
0.1
1
10
100
0.1
1
10
100
1000
V DS , Drain-to-Source Voltage (V)
I
D
(A)
T A =25
o C
Single Pulse
100us
1ms
10ms
100ms
1s
DC
0
10
20
30
02
46
V GS , Gate-to-Source Voltage (V)
I
D
,
Drain
Current
(A)
T j =150
o C
T j =25
o C
V DS =5V
0.001
0.01
0.1
1
0.0001
0.001
0.01
0.1
1
10
100
1000
t , Pulse Width (s)
Norm
alize
d
Th
er
m
al
R
espon
se
(
R
th
ja
)
PDM
Duty factor = t/T
Peak Tj = PDM x Rthja + Ta
Rthja = 125℃
℃
℃/W
t
T
0.02
0.01
0.05
0.1
0.2
Duty factor=0.5
Single Pulse
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