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参数资料
| 型号： | AP9510GM |
| 厂商： | ADVANCED POWER ELECTRONICS CORP |
| 元件分类： | JFETs |
| 英文描述： | 6.9 A, 30 V, 0.028 ohm, 2 CHANNEL, N AND P-CHANNEL, Si, POWER, MOSFET |
| 封装： | LEAD FREE, SOP-8 |
| 文件页数： | 2/7页 |
| 文件大小： | 96K |
| 代理商： | AP9510GM |
N-CH Electrical Characteristics@Tj=25
oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max. Units
BVDSS
Drain-Source Breakdown Voltage
VGS=0V, ID=250uA
30
-
V
ΔBV
DSS/ΔTj
Breakdown Voltage Temperature Coefficient
Reference to 25℃, ID=1mA
-
0.02
-V/℃
RDS(ON)
Static Drain-Source On-Resistance
2
VGS=10V, ID=5A
-
28
mΩ
VGS=4.5V, ID=3A
-
40
mΩ
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250uA
1
-
3
V
gfs
Forward Transconductance
VDS=10V, ID=5A
-
4.6
-
S
IDSS
Drain-Source Leakage Current (Tj=25
oC)
VDS=30V, VGS=0V
-
1
uA
Drain-Source Leakage Current (Tj=70
oC)
VDS=24V, VGS=0V
-
25
uA
IGSS
Gate-Source Leakage
VGS=±20V
-
nA
Qg
Total Gate Charge
2
ID=6.9A
-
10
16
nC
Qgs
Gate-Source Charge
VDS=24V
-
2
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=4.5V
-
6
-
nC
td(on)
Turn-on Delay Time
2
VDS=15V
-
8
-
ns
tr
Rise Time
ID=1A
-
7
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω,VGS=10V
-
20
-
ns
tf
Fall Time
RD=15Ω
-6
-
ns
Ciss
Input Capacitance
VGS=0V
-
540
870
pF
Coss
Output Capacitance
VDS=25V
-
160
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
120
-
pF
Source-Drain Diode
Symbol
Parameter
Test Conditions
Min.
Typ.
Max. Units
VSD
Forward On Voltage
2
IS=1.7A, VGS=0V
-
1.2
V
trr
Reverse Recovery Time
IS=6.9A, VGS=0V
-
20
-
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/s
-
11
-
nC
AP9510GM
±100
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