参数资料
型号: AP9561GM
厂商: ADVANCED POWER ELECTRONICS CORP
元件分类: JFETs
英文描述: 9.4 A, 40 V, 0.018 ohm, P-CHANNEL, Si, POWER, MOSFET
封装: ROHS COMPLIANT, SOP-8
文件页数: 3/5页
文件大小: 217K
代理商: AP9561GM
AP9561GM
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
Fig 5. Forward Characteristic of
Fig 6. Gate Threshold Voltage v.s.
Reverse Diode
Junction Temperature
3
0
10
20
30
40
01234
-V DS , Drain-to-Source Voltage (V)
-I
D
,
Dr
a
in
C
u
rr
e
nt
(A
)
T A =25
o C
-10V
-7.0V
-5.0V
-4.5V
V G = -3.0 V
0
10
20
30
40
012
3456
-V DS , Drain-to-Source Voltage (V)
-I
D
,
Dr
a
in
C
u
rr
e
nt
(A
)
T A = 150
o C
-10V
-7.0V
-5.0V
-4.5V
V G = -3.0 V
10
14
18
22
26
30
2468
10
-V GS , Gate-to-Source Voltage (V)
R
DS(ON)
(m
Ω
)
I D =- 6 A
T A =25
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
-50
0
50
100
150
T j , Junction Temperature (
o C)
N
o
rmalize
d
R
DS(ON)
I D =- 9 A
V G =-10V
1
1.4
1.8
2.2
2.6
-50
0
50
100
150
T j , Junction Temperature (
o C)
-V
GS(t
h)
(V
)
0
2
4
6
8
10
0
0.2
0.4
0.6
0.8
1
1.2
1.4
-V SD , Source-to-Drain Voltage (V)
-I
S(A
)
T j =25
o C
T j =150
o C
相关PDF资料
PDF描述
AP9562GP-HF 27 A, 40 V, 0.032 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB
AP9563GJ-HF 26 A, 40 V, 0.04 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-251
AP9563GH-HF 26 A, 40 V, 0.04 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252
AP9565BGJ 17 A, 40 V, 0.052 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-251
AP9565BGH 17 A, 40 V, 0.052 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252
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