参数资料
型号: AP9563GJ-HF
厂商: ADVANCED POWER ELECTRONICS CORP
元件分类: JFETs
英文描述: 26 A, 40 V, 0.04 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-251
封装: HALOGEN FREE AND ROHS COMPLIANT PACKAGE-3
文件页数: 4/4页
文件大小: 99K
代理商: AP9563GJ-HF
AP9563GH/J-HF
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
Fig 11. Switching Time Waveform
Fig 12. Gate Charge Waveform
4
td(on) tr
td(off)tf
VDS
VGS
10%
90%
Q
VG
-4.5V
QGS
QGD
QG
Charge
0
2
4
6
8
10
12
14
0
10203040
Q G , Total Gate Charge (nC)
-V
GS
,
G
a
te
to
S
o
u
rc
e
Voltage
(
V
)
V DS =-32V
I D =-12A
100
1000
10000
1
5
9
131721
2529
-V DS , Drain-to-Source Voltage (V)
C
(
p
F)
f=1.0MHz
C iss
C oss
C rss
0.1
1
10
100
0.1
1
10
100
-V DS , Drain-to-Source Voltage (V)
-I
D
(A
)
T C =25
o C
Single Pulse
100us
1ms
10ms
100ms
1s
DC
0.01
0.1
1
0.00001
0.0001
0.001
0.01
0.1
1
t , Pulse Width (s)
N
o
rmalize
d
T
h
e
rmal
Re
spon
se
(
R
th
jc
)
PDM
Duty factor = t/T
Peak Tj = PDM x Rthjc + TC
t
T
0.02
0.01
0.05
0.1
0.2
Duty factor=0.5
Single Pulse
相关PDF资料
PDF描述
AP9563GH-HF 26 A, 40 V, 0.04 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252
AP9565BGJ 17 A, 40 V, 0.052 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-251
AP9565BGH 17 A, 40 V, 0.052 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252
AP9565GEH 24 A, 40 V, 0.038 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252
AP9565GEJ 24 A, 40 V, 0.038 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-251
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