参数资料
型号: AP9565BGJ
厂商: ADVANCED POWER ELECTRONICS CORP
元件分类: JFETs
英文描述: 17 A, 40 V, 0.052 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-251
封装: ROHS COMPLIANT PACKAGE-3
文件页数: 3/4页
文件大小: 97K
代理商: AP9565BGJ
AP9565BGH/J
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
Fig 5. Forward Characteristic of
Fig 6. Gate Threshold Voltage v.s.
Reverse Diode
Junction Temperature
3
0
10
20
30
40
01
234
56
-V DS , Drain-to-Source Voltage (V)
-I
D
,
Drain
Current
(A)
T C =25
o C
V G = -3.0 V
-10V
-7.0V
-5.0V
-4.5V
40
50
60
70
80
90
2468
10
-V GS , Gate-to-Source Voltage (V)
R
DS(
ON)
(m
Ω
)
I D =-6 A
T C =25
0.6
0.9
1.2
1.5
1.8
-50
0
50
100
150
T j , Junction Temperature (
o C)
Norm
alize
d
R
DS(
ON)
I D =-8A
V G =-10V
0.4
0.6
0.8
1
1.2
1.4
-50
0
50
100
150
T j , Junction Temperature (
o C)
Norm
alize
d
-
V
GS(
th)
(V)
0
2
4
6
8
10
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
-V SD , Source-to-Drain Voltage (V)
-I
S(A)
T j =25
o C
T j =150
o C
0
10
20
30
40
0123456
-V DS , Drain-to-Source Voltage (V)
-I
D
,
Drain
Current
(A)
T C = 150
o C
-10V
-7.0V
-5.0V
-4.5V
V G = -3.0 V
相关PDF资料
PDF描述
AP9565BGH 17 A, 40 V, 0.052 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252
AP9565GEH 24 A, 40 V, 0.038 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252
AP9565GEJ 24 A, 40 V, 0.038 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-251
AP9566GH 13.6 A, 40 V, 0.065 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252
AP9566GM 4.5 A, 40 V, 0.072 ohm, P-CHANNEL, Si, POWER, MOSFET
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