参数资料
型号: AP9565GEH
厂商: ADVANCED POWER ELECTRONICS CORP
元件分类: JFETs
英文描述: 24 A, 40 V, 0.038 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252
封装: ROHS COMPLIANT PACKAGE-3
文件页数: 4/4页
文件大小: 0K
代理商: AP9565GEH
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
Fig 11. Transfer Characteristics
Fig 12. Gate Charge Waveform
4
AP9565GEH/J
Q
VG
-4.5V
QGS
QGD
QG
Charge
10
100
1000
1
5
9
13
17
21
25
29
-V DS , Drain-to-Source Voltage (V)
C
(
pF)
f=1.0MHz
C iss
C oss
C rss
0
2
4
6
8
10
12
04
8
12
16
20
Q G , Total Gate Charge (nC)
-V
GS
,G
ate
to
S
ou
rc
eVoltage
(
V
)
I D = - 16 A
V DS = - 30 V
0.1
1
10
100
0.1
1
10
100
-V DS , Drain-to-Source Voltage (V)
-I
D
(A
)
T c =25
o C
Single Pulse
100us
1ms
10ms
100ms
DC
0
10
20
30
40
02
46
-V GS , Gate-to-Source Voltage (V)
-I
D
,Dr
ai
n
C
u
rr
ent
(A
)
T j =150
o C
T j =25
o C
V DS = -5V
0.01
0.1
1
0.00001
0.0001
0.001
0.01
0.1
1
t , Pulse Width (s)
N
ormalize
dT
h
er
mal
Re
spon
se
(
R
th
jc
)
PDM
Duty factor = t/T
Peak Tj = PDM x Rthjc + TC
t
T
0.0
0.1
0.2
DUTY=0.
SINGLE PULSE
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