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参数资料
| 型号： | AP9566GH |
| 厂商： | ADVANCED POWER ELECTRONICS CORP |
| 元件分类： | JFETs |
| 英文描述： | 13.6 A, 40 V, 0.065 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252 |
| 封装： | ROHS COMPLIANT PACKAGE-3 |
| 文件页数： | 4/5页 |
| 文件大小： | 166K |
| 代理商： | AP9566GH |
Philips Semiconductors
Product data
NE/SA556
Dual timer
2001 Aug 03
4
ABSOLUTE MAXIMUM RATINGS
SYMBOL
PARAMETER
RATING
UNIT
VCC
Supply voltage
+16
V
PD
Maximum allowable power dissipation1
800
mW
Operating temperature range
Tamb
NE556
0 to +70
°C
SA556
-40 to +85
°C
Tstg
Storage temperature range
-65 to +150
°C
TSOLD
Lead soldering temperature (10 sec max)
+230
°C
NOTE:
1. The junction temperature must be kept below 125
°C for the D package and below 150 °C for the N package. At ambient temperatures
above 25
°C, where this limit would be exceeded, the Maximum Allowable Power Dissipation must be derated by the following:
D package 115
°C/W
N package 80
°C/W
相关PDF资料 |
PDF描述 |
|---|---|
| AP9566GM | 4.5 A, 40 V, 0.072 ohm, P-CHANNEL, Si, POWER, MOSFET |
| AP9567GM | 40 V, 0.05 ohm, P-CHANNEL, Si, POWER, MOSFET |
| AP9575AGI-HF | 17 A, 60 V, 0.064 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| AP9575AGJ | 17 A, 60 V, 0.064 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-251 |
| AP9575AGH | 17 A, 60 V, 0.064 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| AP9566GM | 制造商:A-POWER 制造商全称:Advanced Power Electronics Corp. 功能描述:P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP9567 | 功能描述:电源排插 Rack PDU Basic Zero U 15A RoHS:否 制造商:Wiremold 出口数量: 浪涌能量额定值: 数据线路保护:N 电线长度:15 ft 安装风格: 输出电压:120 V 电流额定值:15 A |
| AP9567GH-HF | 制造商:A-POWER 制造商全称:Advanced Power Electronics Corp. 功能描述:Lower On-resistance, Simple Drive Requirement, Fast Switching Characteristic |
| AP9567GJ-HF | 制造商:A-POWER 制造商全称:Advanced Power Electronics Corp. 功能描述:Lower On-resistance, Simple Drive Requirement |
| AP9567GM | 制造商:A-POWER 制造商全称:Advanced Power Electronics Corp. 功能描述:Simple Drive Requirement, Low On-resistance |
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