参数资料
型号: AP9567GJ-HF
厂商: ADVANCED POWER ELECTRONICS CORP
元件分类: JFETs
英文描述: 22 A, 40 V, 0.05 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-251
封装: HALOGEN FREE AND ROHS COMPLIANT PACKAGE-3
文件页数: 4/4页
文件大小: 101K
代理商: AP9567GJ-HF
AP9567GH/J-HF
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
Fig 11. Transfer Characteristics
Fig 12. Gate Charge Waveform
4
Q
VG
-4.5V
QGS
QGD
QG
Charge
0
2
4
6
8
10
0
5
10
15
20
25
Q G , Total Gate Charge (nC)
-V
GS
,
G
a
te
to
S
o
u
rc
e
Voltage
(
V
)
V DS =-32V
I D =-15A
0
400
800
1200
1600
1
5
9
13
17
21
25
29
-V DS , Drain-to-Source Voltage (V)
C
(
p
F)
f=1.0MHz
C iss
C oss
C rss
0
10
20
30
40
02468
-V GS , Gate-to-Source Voltage (V)
-I
D
,
Dr
a
in
C
u
rr
e
nt
(A
)
T j =150
o C
T j =25
o C
V DS =-5V
0.01
0.1
1
0.00001
0.0001
0.001
0.01
0.1
1
t , Pulse Width (s)
N
o
rmalize
d
T
h
e
rmal
Re
spon
se
(
R
th
jc
)
PDM
Duty factor = t/T
Peak Tj = PDM x Rthjc + TC
t
T
0.02
0.01
0.05
0.1
0.2
Duty factor=0.5
Single Pulse
0.1
1
10
100
0.1
1
10
100
-V DS , Drain-to-Source Voltage (V)
-I
D
(A
)
T c =25
o C
Single Pulse
100us
1ms
10ms
100ms
1s
DC
Operation in this area
limited by RDS(ON)
相关PDF资料
PDF描述
AP9567GH-HF 22 A, 40 V, 0.05 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252
AP9569GJ-HF 14 A, 40 V, 0.09 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-251
AP9569GH-HF 14 A, 40 V, 0.09 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252
AP9575GP-HF 16 A, 60 V, 0.07 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB
AP9575GS-HF 16 A, 60 V, 0.07 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-263AB
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