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参数资料
| 型号： | AP9567GM |
| 厂商： | ADVANCED POWER ELECTRONICS CORP |
| 元件分类： | JFETs |
| 英文描述： | 40 V, 0.05 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 封装： | LEAD FREE, SOP-8 |
| 文件页数： | 3/4页 |
| 文件大小： | 70K |
| 代理商： | AP9567GM |
AP9567GM
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
Fig 5. Forward Characteristic of
Fig 6. Gate Threshold Voltage v.s.
Reverse Diode
Junction Temperature
0
10
20
30
40
50
02
46
8
-V DS , Drain-to-Source Voltage (V)
-I
D
,
Drain
Cu
rre
n
t(A)
T A =25
o C
-10V
-7.0V
- 5.0V
-4.5V
V G = -3.0 V
0
10
20
30
40
50
02468
-V DS , Drain-to-Source Voltage (V)
-I
D
,
Drain
Cu
rre
n
t(A)
T A = 150
o C
-10V
-7.0V
- 5.0V
-4.5V
V G = -3.0 V
35
45
55
65
2468
10
-V GS , Gate-to-Source Voltage (V)
R
DS(
ON)
(m
ΩΩΩΩ
)
I D =-4 A
T A =25 ℃
℃
0.4
0.8
1.2
1.6
-50
0
50
100
150
T j , Junction Temperature (
o C)
N
o
rmalize
d
R
DS(
ON)
I D =-6 A
V G =-10V
0
2
4
6
0
0.2
0.4
0.6
0.8
1
1.2
1.4
-V SD , Source-to-Drain Voltage (V)
-I
S
(A
)
T j =25
o C
T j =150
o C
0.2
0.7
1.2
1.7
-50
0
50
100
150
T j , Junction Temperature (
o C)
N
o
rmalize
d
-
V
GS(
th)
(V
)
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