参数资料
型号: AP9578GM
厂商: ADVANCED POWER ELECTRONICS CORP
元件分类: JFETs
英文描述: 60 V, 0.17 ohm, P-CHANNEL, Si, POWER, MOSFET
封装: ROHS COMPLIANT, SOP-8
文件页数: 1/5页
文件大小: 180K
代理商: AP9578GM
Advanced Power
P-CHANNEL ENHANCEMENT MODE
Electronics Corp.
POWER MOSFET
▼ Lower On-resistance
BVDSS
-60V
▼ Simple Drive Requirement
RDS(ON)
170mΩ
▼ Fast Switching Characteristic
ID
-3A
Description
Absolute Maximum Ratings
Symbol
Units
VDS
V
VGS
V
ID@TA=25℃
A
ID@TA=70℃
A
IDM
A
PD@TA=25℃
W
W/℃
TSTG
TJ
Symbol
Value
Unit
Rthj-a
Maximum Thermal Resistance, Junction-ambient
3
50
℃/W
Data and specifications subject to change without notice
RoHS-compliant Product
201024071-1/4
AP9578GM
Rating
-60
±25
-3
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
3, V
GS @ 10V
Continuous Drain Current
3, V
GS @ 10V
-2.3
Pulsed Drain Current
1
-20
2.5
-55 to 150
Operating Junction Temperature Range
-55 to 150
Linear Derating Factor
0.02
Storage Temperature Range
Thermal Data
Parameter
Total Power Dissipation
Advanced Power MOSFETs from APEC provide the designer
with the best combination of fast switching, ruggedized device
design, low on-resistance and cost-effectiveness.
The SO-8 package is widely preferred for commercial-industrial
surface mount applications and suited for low voltage applications
such as DC/DC converters.
S
G
D
SO-8
G
D
S
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