参数资料
型号: AP9578GS
厂商: ADVANCED POWER ELECTRONICS CORP
元件分类: JFETs
英文描述: 10 A, 60 V, 0.16 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-263AB
封装: ROHS COMPLIANT, TO-263, 3 PIN
文件页数: 3/6页
文件大小: 200K
代理商: AP9578GS
AP9578GS/P
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
Fig 5. Forward Characteristic of
Fig 6. Gate Threshold Voltage v.s.
Reverse Diode
Junction Temperature
3
0.4
0.8
1.2
1.6
2.0
-50
0
50
100
150
T j , Junction Temperature (
o C)
Norm
alize
d
R
DS(
ON)
I D =-5 A
V G = - 10V
0.0
2.0
4.0
6.0
8.0
10.0
0
0.4
0.8
1.2
1.6
-V SD , Source-to-Drain Voltage (V)
-I
S(A)
T j =25
o C
T j =150
o C
0
5
10
15
20
25
30
02
468
10
12
-V DS , Drain-to-Source Voltage (V)
-I
D
,
Drain
Current
(A)
-10V
-7.0V
-5.0V
-4.5V
V G = -3.0 V
T C =25
o C
0
5
10
15
20
25
02
46
8
10
12
-V DS , Drain-to-Source Voltage (V)
-I
D
,
Drain
Current
(A)
T C = 150
o C
-10V
- 7 .0V
-5.0V
-4.5V
V G = -3.0 V
125
135
145
155
165
175
24
68
10
-V GS , Gate-to-Source Voltage (V)
R
DS(
ON)
(m
Ω
)
I D =-3 A
T C =25
0.0
0.5
1.0
1.5
2.0
-50
0
50
100
150
T j , Junction Temperature (
o C)
Norm
alize
d
V
GS(
th)
(V)
相关PDF资料
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