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参数资料
| 型号： | AP9579GI-HF |
| 厂商： | ADVANCED POWER ELECTRONICS CORP |
| 元件分类： | JFETs |
| 英文描述： | 26.8 A, 60 V, 0.025 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封装： | HALOGEN FREE AND ROHS COMPLIANT, TO-220CFM, 3 PIN |
| 文件页数： | 3/4页 |
| 文件大小： | 94K |
| 代理商： | AP9579GI-HF |
AP9579GI-HF
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
Fig 5. Forward Characteristic of
Fig 6. Gate Threshold Voltage v.s.
Reverse Diode
Junction Temperature
3
17
19
21
23
25
2468
10
-V GS , Gate-to-Source Voltage (V)
R
DS(
ON)
(m
Ω
)
I D = -15 A
T C =25
o C
0
40
80
120
160
0
4
8
12
16
-V DS , Drain-to-Source Voltage (V)
-I
D
,
Drain
Current
(A)
T C =25
o C
-10V
- 7 .0V
- 6 .0V
- 5.0 V
V G =-4 .0 V
0.4
0.8
1.2
1.6
2.0
2.4
-50
0
50
100
150
T j , Junction Temperature (
o C)
Norm
alize
d
R
DS(
ON)
I D = -20 A
V G = -10V
0
4
8
12
16
20
0
0.2
0.4
0.6
0.8
1
1.2
1.4
-V SD , Source-to-Drain Voltage (V)
-I
S(A)
T j =25
o C
T j =150
o C
0.4
0.6
0.8
1.0
1.2
1.4
1.6
-50
0
50
100
150
T j , Junction Temperature (
o C)
Norm
alize
d
-
V
GS(
th)
(V)
0
20
40
60
80
100
0246
8
10
12
-V DS , Drain-to-Source Voltage (V)
-I
D
,
Drain
Current
(A)
T C =150
o C
-10V
-7.0V
-6.0V
-5.0V
V G = -4.0V
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相关代理商/技术参数 |
参数描述 |
|---|---|
| AP9579GJ-HF | 制造商:A-POWER 制造商全称:Advanced Power Electronics Corp. 功能描述:N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP9579GM-HF | 制造商:A-POWER 制造商全称:Advanced Power Electronics Corp. 功能描述:N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP9579GP-HF | 制造商:A-POWER 制造商全称:Advanced Power Electronics Corp. 功能描述:P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP9579GS-HF | 制造商:A-POWER 制造商全称:Advanced Power Electronics Corp. 功能描述:P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP9581GP-HF | 制造商:A-POWER 制造商全称:Advanced Power Electronics Corp. 功能描述:N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
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