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参数资料
| 型号： | AP9581GS-HF |
| 厂商： | ADVANCED POWER ELECTRONICS CORP |
| 元件分类： | JFETs |
| 英文描述： | 95 A, 80 V, 0.015 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-263AB |
| 封装： | HALOGEN FREE AND ROHS COMPLIANT, TO-263, 3 PIN |
| 文件页数： | 3/4页 |
| 文件大小： | 93K |
| 代理商： | AP9581GS-HF |
AP9581GS-HF
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
Fig 5. Forward Characteristic of
Fig 6. Gate Threshold Voltage v.s.
Reverse Diode
Junction Temperature
3
10
12
14
16
18
24
68
10
-V GS , Gate-to-Source Voltage (V)
R
DS(ON)
(m
Ω
)
I D = -20 A
T C =25
o C
0
50
100
150
200
250
024
68
10
-V DS , Drain-to-Source Voltage (V)
-I
D
,
Dr
a
in
C
u
rr
e
nt
(A
)
T C =25
o C
-10V
-8.0V
-7.0V
-6.0V
V G = - 5.0V
0.4
0.8
1.2
1.6
2.0
-50
0
50
100
150
T j , Junction Temperature (
o C)
N
o
rmalize
d
R
DS(ON)
I D = - 30 A
V G = -10V
0
10
20
30
40
0
0.2
0.4
0.6
0.8
1
1.2
1.4
-V SD , Source-to-Drain Voltage (V)
-I
S(A
)
T j =25
o C
T j =150
o C
0.2
0.4
0.6
0.8
1.0
1.2
1.4
-50
0
50
100
150
T j , Junction Temperature (
o C)
N
o
rmalize
d
-
V
GS(t
h)
(V
)
0
40
80
120
160
024
68
10
-V DS , Drain-to-Source Voltage (V)
-I
D
,
Dr
a
in
C
u
rr
e
nt
(A
)
T C =150
o C
-10V
-8.0V
-7.0V
-6.0V
V G = -5.0V
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