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参数资料
| 型号： | AP9585GJ |
| 厂商： | ADVANCED POWER ELECTRONICS CORP |
| 元件分类： | JFETs |
| 英文描述： | 11.2 A, 80 V, 0.18 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-251 |
| 封装： | ROHS COMPLIANT PACKAGE-3 |
| 文件页数： | 3/4页 |
| 文件大小： | 102K |
| 代理商： | AP9585GJ |
AP9585GH/J
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
Fig 5. Forward Characteristic of
Fig 6. Gate Threshold Voltage v.s.
Reverse Diode
Junction Temperature
3
0
5
10
15
20
25
30
35
40
0
2
4
6
8
1012
1416
1820
-V DS , Drain-to-Source Voltage (V)
-I
D
,
Drain
Current
(A)
T C =25
o C
-10V
-6.0V
-5.0V
-4.5V
V G =-3.0V
0
5
10
15
20
25
30
0
2
4
6
8
10
12
14
-V DS , Drain-to-Source Voltage (V)
-I
D
,
Drain
Current
(A)
T C = 150
o C
-10V
-6.0V
-5.0V
-4.5V
V G =-3.0V
130
135
140
145
150
155
3579
11
-V GS , Gate-to-Source Voltage (V)
R
DS(
ON\
)(m
Ω
)
I D =-6 A
T C =25 ℃
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
-50
0
50
100
150
T j , Junction Temperature (
o C)
Norm
alize
d
R
DS(
ON)
I D = -10 A
V G = - 10V
0
1
2
3
4
5
6
0
0.2
0.4
0.6
0.8
1
1.2
1.4
-V SD , Source-to-Drain Voltage (V)
-I
S(A)
T j =25
o C
T j =150
o C
0.5
1.0
1.5
2.0
2.5
-50
0
50
100
150
T j , Junction Temperature (
o C)
-V
GS(
th)
(V)
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相关代理商/技术参数 |
参数描述 |
|---|---|
| AP9585GM | 制造商:A-POWER 制造商全称:Advanced Power Electronics Corp. 功能描述:N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP9585GM-HF | 制造商:A-POWER 制造商全称:Advanced Power Electronics Corp. 功能描述:N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP9585H | 制造商:A-POWER 制造商全称:Advanced Power Electronics Corp. 功能描述:P-CHANNEL ENHANCEMENT MODE |
| AP9585J | 制造商:A-POWER 制造商全称:Advanced Power Electronics Corp. 功能描述:P-CHANNEL ENHANCEMENT MODE |
| AP9585M | 制造商:A-POWER 制造商全称:Advanced Power Electronics Corp. 功能描述:P-CHANNEL ENHANCEMENT MODE |
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