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参数资料
| 型号： | AP9585GM |
| 厂商： | ADVANCED POWER ELECTRONICS CORP |
| 元件分类： | JFETs |
| 英文描述： | 2.7 A, 80 V, 0.18 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 封装： | ROHS COMPLIANT, SOP-8 |
| 文件页数： | 4/5页 |
| 文件大小： | 205K |
| 代理商： | AP9585GM |
Data Sheet D16156EJ2V0DS
2
2SD2403
ELECTRICAL CHARACTERISTICS (Ta = 25
°°°°C)
Parameter
Symbol
Conditions
MIN.
TYP.
MAX.
Unit
Collector cutoff current
I&%2
V&% = 80 V, I( = 0
100
nA
Emitter cutoff current
I(%2
V(% = 6.0 V, I& = 0
100
nA
DC current gain
h)(
V&( = 2.0 V, I& = 0.1 A
80
DC current gain
h)(
V&( = 2.0 V, I& = 1.0 A
100
200
400
DC base voltage
V%(
V&( = 2.0 V, I& = 0.1 A
630
670
730
mV
Collector saturation voltage
V&(VDW
I& = 2.0 A, I% = 0.1 A
150
300
mV
Collector saturation voltage
V&(VDW
I& = 3.0 A, I% = 0.15 A
210
500
mV
Base saturation voltage
V%(VDW
I& = 2.0 A, I% = 0.1 A
0.89
1.2
V
Gain bandwidth product
f7
V&( = 10 V, I( =
0.3 A
130
MHz
Output capacitance
CRE
V&% = 10 V, I( = 0, f = 1 MHz
30
pF
Turn-on time
tRQ
150
ns
Storage time
tVWJ
652
ns
Fall time
tI
I& = 1.0 A, V&&= 10 V
I% =
I% = 0.1 A
R/ = 5.0
40
ns
hFE CLASSIFICATION
Marking
GX
GY
GZ
h)(
100 to 200
160 to 320
200 to 400
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相关代理商/技术参数 |
参数描述 |
|---|---|
| AP9585GM-HF | 制造商:A-POWER 制造商全称:Advanced Power Electronics Corp. 功能描述:N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP9585H | 制造商:A-POWER 制造商全称:Advanced Power Electronics Corp. 功能描述:P-CHANNEL ENHANCEMENT MODE |
| AP9585J | 制造商:A-POWER 制造商全称:Advanced Power Electronics Corp. 功能描述:P-CHANNEL ENHANCEMENT MODE |
| AP9585M | 制造商:A-POWER 制造商全称:Advanced Power Electronics Corp. 功能描述:P-CHANNEL ENHANCEMENT MODE |
| AP9591GP-HF | 制造商:A-POWER 制造商全称:Advanced Power Electronics Corp. 功能描述:N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
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