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参数资料
| 型号： | AP95N25W |
| 厂商： | ADVANCED POWER ELECTRONICS CORP |
| 元件分类： | JFETs |
| 英文描述： | 50 A, 250 V, 0.055 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | ROHS COMPLIANT, TO-3P, 3 PIN |
| 文件页数： | 2/4页 |
| 文件大小： | 59K |
| 代理商： | AP95N25W |
Electrical Characteristics@Tj=25
oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Units
BVDSS
Drain-Source Breakdown Voltage
VGS=0V, ID=1mA
250
-
V
RDS(ON)
Static Drain-Source On-Resistance
2
VGS=10V, ID=25A
-
55
mΩ
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250uA
2.5
-
4
V
gfs
Forward Transconductance
VDS=10V, ID=25A
-
25
-
S
IDSS
Drain-Source Leakage Current
VDS=250V, VGS=0V
-
1
uA
IGSS
Gate-Source Leakage
VGS= ±30V, VDS=0V
-
±0.1
uA
Qg
Total Gate Charge
2
ID=50A
-
168
270
nC
Qgs
Gate-Source Charge
VDS=200V
-
36
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=10V
-
68
-
nC
td(on)
Turn-on Delay Time
2
VDS=125V
-
50
-
ns
tr
Rise Time
ID=25A
-
92
-
ns
td(off)
Turn-off Delay Time
RG=10Ω,VGS=10V
-
250
-
ns
tf
Fall Time
RD=5Ω
-
105
-
ns
Ciss
Input Capacitance
VGS=0V
-
8370 13400
pF
Coss
Output Capacitance
VDS=15V
-
1505
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
60
-
pF
Source-Drain Diode
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Units
VSD
Forward On Voltage
2
IS=50A, VGS=0V
-
1.5
V
trr
Reverse Recovery Time
2
IS=50A, VGS=0V
-
320
-
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/s
-
4.7
-
C
Notes:
1.PW ≦ 10us, duty cycle ≦ 1%
2.Pulse test
3.STch = 25℃，Tch ≦ 150℃
THIS PRODUCT IS AN ELECTROSTATIC SENSITIVE, PLEASE HANDLE WITH CAUTION.
DEVICE OR SYSTEM ARE NOT AUTHORIZED.
2/4
AP95N25W
THIS PRODUCT HAS BEEN QUALIFIED FOR CONSUMER MARKET. APPLICATIONS OR USES AS CRITERIAL COMPONENT IN LIFE SUPPORT
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相关代理商/技术参数 |
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