参数资料
型号: AP9926GM
厂商: ADVANCED POWER ELECTRONICS CORP
元件分类: JFETs
英文描述: 20 V, 0.03 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET
封装: ROHS COMPLIANT, SOP-8
文件页数: 3/4页
文件大小: 60K
代理商: AP9926GM
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Temperature
Fig 5. Forward Characteristic of
Fig 6. Gate Threshold Voltage v.s.
Reverse Diode
Junction Temperature
3
AP9926GM
0
5
10
15
20
25
30
01
23
V DS , Drain-to-Source Voltage (V)
I
D
,
Dr
a
in
C
u
rr
e
nt
(A
)
T A =25
o C
5.0V
4.5 V
3.5 V
2.5 V
V G =2.0V
0
5
10
15
20
25
30
01
23
4
V DS , Drain-to-Source Voltage (V)
I
D
,
Dr
a
in
C
u
rr
e
nt
(A
)
T A = 150
o C
V G = 2.0 V
5.0V
4.5 V
3.5 V
2.5 V
0.6
0.8
1.0
1.2
1.4
1.6
-50
0
50
100
150
T j , Junction Temperature (
o C)
N
o
rmalize
d
R
DS(ON)
I D =6A
V G = 4.5V
0
2
4
6
8
10
0
0.2
0.4
0.6
0.8
1
1.2
V SD , Source-to-Drain Voltage (V)
I
S(A
)
T j =25
o C
T j =150
o C
0.4
0.6
0.8
1.0
1.2
1.4
-50
0
50
100
150
T j , Junction Temperature (
o C)
N
o
rmalize
d
V
GS(t
h)
(V
)
16
20
24
28
32
36
024
68
10
V GS , Gate-to-Source Voltage (V)
R
DS(ON)
(m
Ω
)
I D =4 A
T A =25
o C
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相关代理商/技术参数
参数描述
AP9926GM-HF 制造商:A-POWER 制造商全称:Advanced Power Electronics Corp. 功能描述:Capable of 2.5V Gate Drive, Surface Mount Package
AP9926GO 制造商:A-POWER 制造商全称:Advanced Power Electronics Corp. 功能描述:N-CHANNEL ENHANCEMENT MODE POWER MOSFET
AP9926M 制造商:A-POWER 制造商全称:Advanced Power Electronics Corp. 功能描述:N-CHANNEL ENHANCEMENT MODE POWER MOSFET
AP9926O 制造商:A-POWER 制造商全称:Advanced Power Electronics Corp. 功能描述:N-CHANNEL ENHANCEMENT MODE POWER MOSFET
AP9926TGO 制造商:A-POWER 制造商全称:Advanced Power Electronics Corp. 功能描述:N-CHANNEL ENHANCEMENT MODE POWER MOSFET