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参数资料
| 型号： | AP9928GEM |
| 厂商： | ADVANCED POWER ELECTRONICS CORP |
| 元件分类： | JFETs |
| 英文描述： | 7.3 A, 20 V, 0.023 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | LEAD FREE, SOP-8 |
| 文件页数： | 4/4页 |
| 文件大小： | 72K |
| 代理商： | AP9928GEM |
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
Fig 11. Transfer Characteristics
Fig 12. Gate Charge Waveform
AP9928GEM
Q
VG
4.5V
QGS
QGD
QG
Charge
0
3
6
9
12
15
0
10
203040
Q G , Total Gate Charge (nC)
V
GS
,
Gate
to
S
o
u
rc
eV
oltage
(
V
)
V DS =10 V
V DS =12 V
V DS =1 6 V
I D =7 A
100
1000
10000
1
4
7
1013
1619
V DS , Drain-to-Source Voltage (V)
C
(p
F)
f=1.0MHz
C iss
C oss
C rss
0
10
20
30
01234
V GS , Gate-to-Source Voltage (V)
I
D
,
Drain
Current
(A)
T j =150
o C
T j =25
o C
V DS =5V
0.001
0.01
0.1
1
0.0001
0.001
0.01
0.1
1
10
100
1000
t , Pulse Width (s)
Norm
alize
d
Th
er
m
al
R
espon
se
(
R
th
ja
)
PDM
Duty factor = t/T
Peak Tj = PDM x Rthja + Ta
Rthja=135
oC/W
t
T
0.02
0.01
0.05
0.1
0.2
Duty factor=0.5
Single Pulse
0.01
0.1
1
10
100
0.1
1
10
100
V DS , Drain-to-Source Voltage (V)
I
D
(A)
T A =25
o C
Single Pulse
1ms
10ms
100ms
1s
10s
DC
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相关代理商/技术参数 |
参数描述 |
|---|---|
| AP9928GEO | 制造商:A-POWER 制造商全称:Advanced Power Electronics Corp. 功能描述:N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
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