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参数资料
| 型号： | AP9930AGM |
| 厂商： | ADVANCED POWER ELECTRONICS CORP |
| 元件分类： | JFETs |
| 英文描述： | 30 V, 0.035 ohm, 4 CHANNEL, N AND P-CHANNEL, Si, POWER, MOSFET |
| 封装： | ROHS COMPLIANT, SOP-8 |
| 文件页数： | 6/7页 |
| 文件大小： | 120K |
| 代理商： | AP9930AGM |
AP9930AGM
P-Channel
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
Fig 5. Forward Characteristic of
Fig 6. Gate Threshold Voltage v.s.
Reverse Diode
Junction Temperature
6
0.6
0.8
1
1.2
1.4
1.6
1.8
-50
0
50
100
150
T j , Junction Temperature (
o C)
N
o
rmalize
d
R
DS(ON)
I D =-3 A
V G = -10 V
0
4
8
12
16
20
01
234
-V DS , Drain-to-Source Voltage (V)
-I
D
,
Dr
a
in
C
u
rr
e
nt
(A
)
T A =25
o C
-10V
-7.0V
-6.0V
-5.0V
V G =-4.0V
0
5
10
15
20
012
3456
-V DS , Drain-to-Source Voltage (V)
-I
D
,
Dr
a
in
C
u
rr
e
nt
(A
)
T A =150
o C
-10V
-7.0V
-6.0V
-5.0V
V G =-4.0V
50
60
70
80
90
24
68
10
-V GS , Gate-to-Source Voltage (V)
R
DS(ON)
(m
Ω
)
I D =-2A
T A =25 ℃
0
2
4
6
8
0.1
0.3
0.5
0.7
0.9
1.1
1.3
-V SD ,Source-to-Drain Voltage (V)
-I
S(A
)
T j =25
o C
T j =150
o C
0.4
0.6
0.8
1
1.2
1.4
-50
0
50
100
150
T j , Junction Temperature (
o C)
N
o
rmalize
d
-
V
GS(t
h)
(V
)
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