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参数资料
| 型号： | AP9952GP-HF |
| 厂商： | ADVANCED POWER ELECTRONICS CORP |
| 元件分类： | JFETs |
| 英文描述： | 68 A, 70 V, 0.012 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封装： | HALOGEN FREE AND ROHS COMPLIANT, TO-220, 3 PIN |
| 文件页数： | 1/4页 |
| 文件大小： | 95K |
| 代理商： | AP9952GP-HF |
Advanced Power
N-CHANNEL ENHANCEMENT MODE
Electronics Corp.
POWER MOSFET
▼ Simple Drive Requirement
BVDSS
70V
▼ Lower On-resistance
RDS(ON)
12mΩ
▼ Fast Switching Characteristic
ID
68A
▼ RoHS Compliant & Halogen-Free
Description
Absolute Maximum Ratings
Symbol
Units
VDS
V
VGS
V
ID@TC=25℃
A
ID@TC=100℃
A
IDM
A
PD@TC=25℃
W
TSTG
℃
TJ
℃
Symbol
Value
Units
Rthj-c
Maximum Thermal Resistance, Junction-case
1.2
℃
/W
Rthj-a
Maixmum Thermal Resistance, Junction-ambient
62
℃
/W
Data and specifications subject to change without notice
Thermal Data
Parameter
Storage Temperature Range
Total Power Dissipation
104
-55 to 150
Operating Junction Temperature Range
Continuous Drain Current, VGS @ 10V
43
Pulsed Drain Current
1
200
Gate-Source Voltage
+20
Continuous Drain Current, VGS @ 10V
68
Parameter
Rating
Drain-Source Voltage
70
201002231
1
AP9952GP-HF
Halogen-Free Product
-55 to 150
G
D
S
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
The TO-220 package is widely preferred for commercial-industrial
through-hole applications.
G
D
S
TO-220(P)
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相关代理商/技术参数 |
参数描述 |
|---|---|
| AP9960AGM-HF | 制造商:A-POWER 制造商全称:Advanced Power Electronics Corp. 功能描述:N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP9960GD | 制造商:A-POWER 制造商全称:Advanced Power Electronics Corp. 功能描述:N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP9960GH | 制造商:A-POWER 制造商全称:Advanced Power Electronics Corp. 功能描述:N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP9960GJ | 制造商:A-POWER 制造商全称:Advanced Power Electronics Corp. 功能描述:N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP9960GM-HF | 制造商:A-POWER 制造商全称:Advanced Power Electronics Corp. 功能描述:N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
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