参数资料
型号: AP9971AGM
厂商: ADVANCED POWER ELECTRONICS CORP
元件分类: JFETs
英文描述: 5 A, 60 V, 0.05 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET
封装: ROHS COMPLIANT, SOP-8
文件页数: 4/5页
文件大小: 179K
代理商: AP9971AGM
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
Fig 11. Switching Time Waveform
Fig 12. Gate Charge Waveform
4/4
AP9971AGM
10
100
1000
10000
1
5
9
1317
2125
29
V DS , Drain-to-Source Voltage (V)
C
(
p
F)
f=1.0MHz
Ciss
Crss
Coss
0
2
4
6
8
10
12
14
0
5
10
15
20
25
30
Q G , Total Gate Charge (nC)
V
GS
,
G
a
te
to
S
o
u
rc
e
Voltage
(
V
)
V DS =30V
V DS =36V
V DS =48V
I D =5A
td(on) tr
td(off) tf
VDS
VGS
10%
90%
Q
VG
10V
QGS
QGD
QG
Charge
0.01
0.1
1
10
100
0.1
1
10
100
V DS , Drain-to-Source Voltage (V)
I
D
(A
)
T A =25
o C
Single Pulse
100us
1ms
10ms
100ms
1s
DC
0.01
0.1
1
0.001
0.01
0.1
1
10
100
1000
t , Pulse Width (s)
N
o
rmalize
d
T
h
e
rmal
Re
spon
se
(
R
th
ja
)
0.01
0.05
0.1
0.2
DUTY=0.5
Single Pulse
PDM
Duty factor = t/T
Peak Tj = PDM x Rthja + Ta
t
T
Rthja = 135℃/W
0.02
相关PDF资料
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AP9971AGS 22 A, 60 V, 0.036 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
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AP9971GD 5 A, 60 V, 0.05 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET
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AP9971GJ 25 A, 60 V, 0.036 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251
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