参数资料
型号: AP9972AGI
厂商: ADVANCED POWER ELECTRONICS CORP
元件分类: JFETs
英文描述: 60 A, 60 V, 0.016 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
封装: ROHS COMPLIANT, TO-220CFM, 3 PIN
文件页数: 1/4页
文件大小: 95K
代理商: AP9972AGI
Advanced Power
N-CHANNEL ENHANCEMENT MODE
Electronics Corp.
POWER MOSFET
▼ Low Gate Charge
BVDSS
60V
▼ Single Drive Requirement
RDS(ON)
16mΩ
▼ Fast Switching Performance
ID
60A
Description
Absolute Maximum Ratings
Symbol
Units
VDS
V
VGS
V
ID@TC=25℃
A
ID@TC=100℃
A
IDM
A
PD@TC=25℃
W
TSTG
TJ
Symbol
Value
Units
Rthj-c
Maximum Thermal Resistance, Junction-case
4.0
/W
Rthj-a
Maximum Thermal Resistance, Junction-ambient
65
/W
Data and specifications subject to change without notice
AP9972AGI
200903131
RoHS-compliant Product
1
Parameter
Rating
Drain-Source Voltage
60
Gate-Source Voltage
+20
Continuous Drain Current, VGS @ 10V
60
Continuous Drain Current, VGS @ 10V
38
Pulsed Drain Current
1
240
Total Power Dissipation
31.3
-55 to 150
Operating Junction Temperature Range
-55 to 150
Thermal Data
Parameter
Storage Temperature Range
G
D
S
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
G
D
S
TO-220CFM(I)
The TO-220CFM isolation package is widely preferred for all
commercial-industrial through hole applications.
相关PDF资料
PDF描述
AP9972GH-HF 60 A, 60 V, 0.018 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252
AP9973GH-HF 14 A, 60 V, 0.08 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252
AP9973GJ-HF 14 A, 60 V, 0.08 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251
AP9974GS 72 A, 60 V, 0.012 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
AP9974GP 72 A, 60 V, 0.012 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
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