参数资料
型号: AP9974BGP
厂商: ADVANCED POWER ELECTRONICS CORP
元件分类: JFETs
英文描述: 65 A, 60 V, 0.0135 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
封装: ROHS COMPLIANT, TO-220, 3 PIN
文件页数: 1/4页
文件大小: 93K
代理商: AP9974BGP
Advanced Power
N-CHANNEL ENHANCEMENT MODE
Electronics Corp.
POWER MOSFET
▼ Low On-resistance
BVDSS
60V
▼ Single Drive Requirement
RDS(ON)
13.5mΩ
▼ Fast Switching Characteristic
ID
65A
Description
Absolute Maximum Ratings
Symbol
Units
VDS
V
VGS
V
ID@TC=25℃
A
ID@TC=100℃
A
IDM
A
PD@TC=25℃
W
TSTG
TJ
Symbol
Value
Units
Rthj-c
Maximum Thermal Resistance, Junction-case
1.2
/W
Rthj-a
Maximum Thermal Resistance, Junction-ambient
62
/W
Data and specifications subject to change without notice
Parameter
Storage Temperature Range
Operating Junction Temperature Range
-55 to 150
Thermal Data
Pulsed Drain Current
1
260
Total Power Dissipation
104
Continuous Drain Current, VGS @ 10V
65
Continuous Drain Current, VGS @ 10V
40
Drain-Source Voltage
60
Gate-Source Voltage
+20
AP9974BGP
Parameter
Rating
200906193
RoHS-compliant Product
1
-55 to 150
G
D
S
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
G
D
S
TO-220(P)
The TO-220 package is widely preferred for commercial-industrial
applications and suited for low voltage applications.
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