参数资料
型号: AP9976GP
厂商: ADVANCED POWER ELECTRONICS CORP
元件分类: JFETs
英文描述: 30 A, 60 V, 0.021 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
封装: ROHS COMPLIANT, TO-220, 3 PIN
文件页数: 1/5页
文件大小: 149K
代理商: AP9976GP
Advanced Power
N-CHANNEL ENHANCEMENT MODE
Electronics Corp.
POWER MOSFET
▼ Simple Drive Requirement
BVDSS
60V
▼ Lower Gate Charge
RDS(ON)
21mΩ
▼ Fast Switching Characteristic
ID
30A
Description
Absolute Maximum Ratings
Symbol
Units
VDS
V
VGS
V
ID@TC=25℃
A
ID@TC=100℃
A
IDM
A
PD@TC=25℃
W
TSTG
TJ
Symbol
Value
Units
Rthj-c
Maximum Thermal Resistance, Junction-case
3.2
/W
Rthj-a
Maixmum Thermal Resistance, Junction-ambient
62
/W
Data and specifications subject to change without notice
200806021
1
AP9976GP
RoHS-compliant Product
Parameter
Rating
Drain-Source Voltage
60
Gate-Source Voltage
±20
Continuous Drain Current, VGS @ 10V
30
Continuous Drain Current, VGS @ 10V
19
Pulsed Drain Current
1
100
Total Power Dissipation
39
-55 to 150
Operating Junction Temperature Range
-55 to 150
Thermal Data
Parameter
Storage Temperature Range
G
D
S
Advanced Power MOSFETs from APEC provide the designer with
the best combination of fast switching, ruggedized device design,
low
on-resistance and cost-effectiveness.
The TO-220 package is widely preferred for commercial-industrial
through-hole applications.
G
D
S
TO-220(P)
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