参数资料
型号: AP9979GJ
厂商: ADVANCED POWER ELECTRONICS CORP
元件分类: JFETs
英文描述: 20 A, 60 V, 0.048 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251
封装: ROHS COMPLIANT PACKAGE-3
文件页数: 3/6页
文件大小: 235K
代理商: AP9979GJ
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
Fig 5. Forward Characteristic of
Fig 6. Gate Threshold Voltage v.s.
Reverse Diode
Junction Temperature
3
AP9979GH/J
0
10
20
30
40
50
024
68
10
V DS , Drain-to-Source Voltage (V)
I
D
,
Dr
a
in
C
u
rr
e
nt
(A
)
T C =25
o C
10V
7.0V
5.0V
4.5V
V G =3.0V
0
10
20
30
40
50
02
46
8
10
12
V DS , Drain-to-Source Voltage (V)
I
D
,
Dr
a
in
C
u
rr
e
nt
(A
)
T C = 150
o C
10V
7.0V
5.0V
4.5V
V G =3.0V
30
40
50
60
70
2468
10
V GS , Gate-to-Source Voltage (V)
R
DS(ON)
(m
Ω
)
I D =7 A
T C =25
o C
0.4
0.8
1.2
1.6
2.0
-50
0
50
100
150
T j , Junction Temperature (
o C)
N
o
rmalize
d
R
DS(ON)
I D =13A
V G =10V
0
3
6
9
12
0
0.2
0.4
0.6
0.8
1
1.2
V SD , Source-to-Drain Voltage (V)
I
S(A
)
T j =25
o C
T j =150
o C
0.3
0.7
1.1
1.5
-50
0
50
100
150
T j , Junction Temperature (
o C)
N
o
rmalize
d
V
GS(t
h)
(V
)
相关PDF资料
PDF描述
AP9979GH 20 A, 60 V, 0.048 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252
AP9980GH 21.3 A, 80 V, 0.045 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252
AP9980GJ 21.3 A, 80 V, 0.045 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251
AP9985GM 10 A, 40 V, 0.015 ohm, N-CHANNEL, Si, POWER, MOSFET
AP9987GJ 15 A, 80 V, 0.09 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251
相关代理商/技术参数
参数描述
AP9980GH 制造商:A-POWER 制造商全称:Advanced Power Electronics Corp. 功能描述:N-CHANNEL ENHANCEMENT MODE POWER MOSFET
AP9980GJ 制造商:A-POWER 制造商全称:Advanced Power Electronics Corp. 功能描述:N-CHANNEL ENHANCEMENT MODE POWER MOSFET
AP9980GM 制造商:A-POWER 制造商全称:Advanced Power Electronics Corp. 功能描述:N-CHANNEL ENHANCEMENT MODE POWER MOSFET
AP9980H 制造商:A-POWER 制造商全称:Advanced Power Electronics Corp. 功能描述:N-CHANNEL ENHANCEMENT MODE
AP9980J 制造商:A-POWER 制造商全称:Advanced Power Electronics Corp. 功能描述:N-CHANNEL ENHANCEMENT MODE