参数资料
型号: AP9997GM
厂商: ADVANCED POWER ELECTRONICS CORP
元件分类: JFETs
英文描述: 3 A, 95 V, 0.11 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET
封装: ROHS COMPLIANT, SOP-8
文件页数: 1/5页
文件大小: 182K
代理商: AP9997GM
Advanced Power
N-CHANNEL ENHANCEMENT MODE
Electronics Corp.
POWER MOSFET
▼ Fast Switching Characteristic
BVDSS
95V
▼ Single Drive Requirement
RDS(ON)
110mΩ
▼ Surface Mount Package
ID
3A
Description
Absolute Maximum Ratings
Symbol
Units
VDS
V
VGS
V
ID@TA=25℃
A
ID@TA=100℃
A
IDM
A
PD@TA=25℃
W
TSTG
TJ
Symbol
Value
Unit
Rthj-a
62.5
℃/W
Data and specifications subject to change without notice
-55 to 150
Maximum Thermal Resistance, Junction-ambient
3
Thermal Data
Parameter
Gate-Source Voltage
±20
Continuous Drain Current
3, V
GS @ 10V
3
Continuous Drain Current
3, V
GS @ 10V
2.3
Pulsed Drain Current
1
1
20
Operating Junction Temperature Range
-55 to 150
Storage Temperature Range
Total Power Dissipation
2
200803063
AP9997GM
RoHS-compliant Product
Parameter
Rating
Drain-Source Voltage
95
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, ultra low on-resistance
and cost-effectiveness.
S1
G1
S2
G2
D1
D2
SO-8
G2
D2
S2
G1
D1
S1
The SO-8 package is widely preferred for commercial
-industrial surface mount applications and suited for
low voltage applications such as DC/DC converters.
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