参数资料
型号: APA150-TQG100I
厂商: Microsemi SoC
文件页数: 123/178页
文件大小: 0K
描述: IC FPGA PROASIC+ 150K 100-TQFP
标准包装: 90
系列: ProASICPLUS
RAM 位总计: 36864
输入/输出数: 66
门数: 150000
电源电压: 2.3 V ~ 2.7 V
安装类型: 表面贴装
工作温度: -40°C ~ 85°C
封装/外壳: 100-LQFP
供应商设备封装: 100-TQFP(14x14)
ProASICPLUS Flash Family FPGAs
v5.9
2-39
IDDQ
Quiescent Supply Current
(standby)
Military
VIN = GND
4 or V
DD
Std.
5.0
25
mA
IOZ
Tristate
Output
Leakage
Current
VOH = GND or VDD
Std.
–10
10
A
IOSH
Output Short Circuit Current
High
3.3 V High Drive (OB33P)
3.3 V Low Drive (OB33L)
VIN = GND
–200
–100
IOSL
Output Short Circuit Current
Low
3.3 V High Drive
3.3 V Low Drive
VIN = VDD
200
100
CI/O
I/O Pad Capacitance
10
pF
CCLK
Clock Input Pad Capacitance
10
pF
Table 2-24 DC Electrical Specifications (VDDP = 3.3 V ±0.3 V and VDD = 2.5 V ±0.2 V) (Continued)
Applies to Military Temperature and MIL-STD-883B Temperature Only
Symbol
Parameter
Conditions
Military/MIL-STD-883B1
Units
Min.
Typ.
Max.
Notes:
1. All process conditions. Military Temperature / MIL-STD-883 Class B: Junction Temperature: –55 to +125°C.
2. During transitions, the input signal may overshoot to VDDP +1.0 V for a limited time of no larger than 10% of the duty cycle.
3. During transitions, the input signal may undershoot to –1.0 V for a limited time of no larger than 10% of the duty cycle.
4. No pull-up resistor required.
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